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Article: Resistance steps and asymmetric conduction induced by currents in La 0.8Ca0.2MnO3 films

TitleResistance steps and asymmetric conduction induced by currents in La 0.8Ca0.2MnO3 films
Authors
Wang, JGao, JWang, L
KeywordsAsymmetric conduction
Resistance steps
Transport
Anisotropic conduction
Asymmetric characteristic
Issue Date2010
PublisherIEEE
Citation
IEEE Transactions on Magnetics, 2010, v. 46 n. 6, p. 1503-1506 How to Cite?
DOI: http://dx.doi.org/10.1109/TMAG.2010.2044752
AbstractA constant voltage mode of a power supply was adopted to study the current-induced effects in La0.8Ca0.2MnO3 epitaxial thin films. After processed by a current of the density of ∼3×105 A/cm2 for 1 minute, they exhibited anisotropic conduction. Like the behavior of p-n junctions, the current starts to increase dramatically in the forward direction at a threshold voltage (opening voltage VOP), e.g., ∼ 2.3 V at 30 K. For a processing with extending duration, the resistance while processing dropped from 10 kΩ to 2 kΩ. Current voltage curves measured following such a step showed more stable asymmetric characteristics and substantial reduction of VOPM, which is ∼0.8 V at 290 K and ∼1.6 V at 50 K. Our results are useful for revealing the origin of asymmetric conduction induced by current and for potential application.
Persistent Identifierhttp://hdl.handle.net/10722/125264
ISSN
0018-9464
2021 Impact Factor: 1.848
2020 SCImago Journal Rankings: 0.620
ISI Accession Number ID
WOS:000278037800057
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7024/07P
University of Hong Kong
Funding Information:

This work has been supported by the Research Grant Council of Hong Kong under Project HKU 7024/07P and a seed fund from the University of Hong Kong.

 

DC FieldValueLanguage
dc.contributor.authorWang, Jen_HK
dc.contributor.authorGao, Jen_HK
dc.contributor.authorWang, Len_HK
dc.date.accessioned2010-10-31T11:20:52Z-
dc.date.available2010-10-31T11:20:52Z-
dc.date.issued2010en_HK
dc.identifier.citationIEEE Transactions on Magnetics, 2010, v. 46 n. 6, p. 1503-1506en_HK
dc.identifier.issn0018-9464-
dc.identifier.urihttp://hdl.handle.net/10722/125264-
dc.description.abstractA constant voltage mode of a power supply was adopted to study the current-induced effects in La<sub>0.8</sub>Ca<sub>0.2</sub>MnO<sub>3</sub> epitaxial thin films. After processed by a current of the density of ∼3×10<sup>5</sup> A/cm<sup>2</sup> for 1 minute, they exhibited anisotropic conduction. Like the behavior of p-n junctions, the current starts to increase dramatically in the forward direction at a threshold voltage (opening voltage V<sub>OP</sub>), e.g., ∼ 2.3 V at 30 K. For a processing with extending duration, the resistance while processing dropped from 10 kΩ to 2 kΩ. Current voltage curves measured following such a step showed more stable asymmetric characteristics and substantial reduction of V<sub>OPM</sub>, which is ∼0.8 V at 290 K and ∼1.6 V at 50 K. Our results are useful for revealing the origin of asymmetric conduction induced by current and for potential application.-
dc.languageengen_HK
dc.publisherIEEEen_HK
dc.relation.ispartofIEEE Transactions on Magneticsen_HK
dc.rights©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectAsymmetric conduction-
dc.subjectResistance steps-
dc.subjectTransport-
dc.subjectAnisotropic conduction-
dc.subjectAsymmetric characteristic-
dc.titleResistance steps and asymmetric conduction induced by currents in La 0.8Ca0.2MnO3 filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9464&volume=46&issue=6&spage=1503&epage=1506&date=2010&atitle=Resistance+steps+and+asymmetric+conduction+induced+by+currents+in+La+0.8Ca0.2MnO3+films-
dc.identifier.emailGao, J: jugao@hku.hken_HK
dc.identifier.authorityGao, J=rp00699en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/TMAG.2010.2044752-
dc.identifier.scopuseid_2-s2.0-77952793845-
dc.identifier.hkuros181545en_HK
dc.identifier.volume46en_HK
dc.identifier.issue6-
dc.identifier.spage1503en_HK
dc.identifier.epage1506en_HK
dc.identifier.isiWOS:000278037800057-
dc.identifier.issnl0018-9464-

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