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Article: Optically pumped ultraviolet lasing from nitride nanopillars at room temperature

TitleOptically pumped ultraviolet lasing from nitride nanopillars at room temperature
Authors
KeywordsDielectric mirrors
Excitation density
In-situ
Lasing action
Nano sphere lithography
Issue Date2010
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2010, v. 96 n. 24, article no. 241101 How to Cite?
AbstractA vertical cavity structure composing of an in situ grown bottom Al x Ga 1-x N/Al y Ga 1-y N distributed Bragg reflector and a top SiO 2 / HfO 2 dielectric mirror for ultraviolet (UV) emission has been demonstrated. Close-packed nanopillars with diameters of around 500 nm have been achieved by the route of nanosphere lithography combined with inductively-coupled plasma etching. Optically-pumped UV lasing at a wavelength of 343.7 nm (3.608 eV) was observed at room temperature, with a threshold excitation density of 0.52 MW/ cm 2. The mechanism of the lasing action is discussed in detail. Our investigation indicates promising possibilities in nitride-based resonant cavity devices, particularly toward realizing the UV nitride-based vertical-cavity surface-emitting laser. © 2010 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/124746
ISSN
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
Funding AgencyGrant Number
Singapore MOERG40/07
Research Grant Council of Hong KongHKU 7118/09E
Funding Information:

H. D. S. acknowledges support from Singapore MOE under Grant No. RG40/07. This work was partially supported by a GRF grant of the Research Grant Council of Hong Kong (Project No. HKU 7118/09E)

References

 

DC FieldValueLanguage
dc.contributor.authorChen, Ren_HK
dc.contributor.authorSun, HDen_HK
dc.contributor.authorWang, Ten_HK
dc.contributor.authorHui, KNen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2010-10-31T10:51:44Z-
dc.date.available2010-10-31T10:51:44Z-
dc.date.issued2010en_HK
dc.identifier.citationApplied Physics Letters, 2010, v. 96 n. 24, article no. 241101-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/124746-
dc.description.abstractA vertical cavity structure composing of an in situ grown bottom Al x Ga 1-x N/Al y Ga 1-y N distributed Bragg reflector and a top SiO 2 / HfO 2 dielectric mirror for ultraviolet (UV) emission has been demonstrated. Close-packed nanopillars with diameters of around 500 nm have been achieved by the route of nanosphere lithography combined with inductively-coupled plasma etching. Optically-pumped UV lasing at a wavelength of 343.7 nm (3.608 eV) was observed at room temperature, with a threshold excitation density of 0.52 MW/ cm 2. The mechanism of the lasing action is discussed in detail. Our investigation indicates promising possibilities in nitride-based resonant cavity devices, particularly toward realizing the UV nitride-based vertical-cavity surface-emitting laser. © 2010 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2010, v. 96 n. 24, article no. 241101 and may be found at https://doi.org/10.1063/1.3449576-
dc.subjectDielectric mirrors-
dc.subjectExcitation density-
dc.subjectIn-situ-
dc.subjectLasing action-
dc.subjectNano sphere lithography-
dc.titleOptically pumped ultraviolet lasing from nitride nanopillars at room temperatureen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=96 &issue=24 article no. 241101&spage=&epage=&date=2010&atitle=Optically+pumped+ultraviolet+lasing+from+nitride+nanopillars+at+room+temperatureen_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3449576en_HK
dc.identifier.scopuseid_2-s2.0-77953749059en_HK
dc.identifier.hkuros175219en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77953749059&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume96en_HK
dc.identifier.issue24en_HK
dc.identifier.spagearticle no. 241101-
dc.identifier.epagearticle no. 241101-
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000278911500001-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, R=35487156200en_HK
dc.identifier.scopusauthoridSun, HD=24282130400en_HK
dc.identifier.scopusauthoridWang, T=22136867200en_HK
dc.identifier.scopusauthoridHui, KN=12139840100en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.issnl0003-6951-

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