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Conference Paper: Reliability study on green InGaN/GaN light emitting diodes

TitleReliability study on green InGaN/GaN light emitting diodes
Authors
KeywordsElectronics and devices
Semiconductors
Surfaces, interfaces and thin films
Optics, quantum optics and lasers
Nanoscale science and low-D systems
Issue Date2010
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/EJ/journal/conf
Citation
The 16th International Conference on Microscopy of Semiconducting Materials, Oxford University, UK., 17-20 March 2009. In Journal of Physics: Conference Series, 2010, v. 209, article no. 012065 How to Cite?
AbstractAlthough InGaN/GaN green light-emitting diodes (LEDs) are widely available, it is still challenging to grow green LED structures for emission at longer wavelengths due to the difficulty associated with the incorporation of In. The higher concentration of In may also affect the performance and reliability of the device. The reliability of green GaN LEDs with three different indium doping concentrations, with centre-wavelength of 520 nm, 540 nm and 550 nm, is studied in this paper. The electrical properties, including I-V characteristics, leakage current and 1/f noise were measured. The optical performance of the devices was also evaluated. The devices were subsequently subjected to a 1000 hours continuous stress test. The defect densities of the LED structures were also determined. Our results show that the 520 nm LED, which contains the lowest indium concentration in its quantum wells, produces highest optical output power at 20 mA. It also degrades slower than 540 nm and 550 nm LEDs. © 2010 IOP Publishing Ltd.
DescriptionThis journal vol. contains invited and contributed papers from the 16th international conference on 'Microscopy of Semiconducting Materials' ... 2009
Persistent Identifierhttp://hdl.handle.net/10722/124731
ISSN
2015 SCImago Journal Rankings: 0.211
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, ZLen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2010-10-31T10:50:56Z-
dc.date.available2010-10-31T10:50:56Z-
dc.date.issued2010en_HK
dc.identifier.citationThe 16th International Conference on Microscopy of Semiconducting Materials, Oxford University, UK., 17-20 March 2009. In Journal of Physics: Conference Series, 2010, v. 209, article no. 012065en_HK
dc.identifier.issn1742-6588en_HK
dc.identifier.urihttp://hdl.handle.net/10722/124731-
dc.descriptionThis journal vol. contains invited and contributed papers from the 16th international conference on 'Microscopy of Semiconducting Materials' ... 2009-
dc.description.abstractAlthough InGaN/GaN green light-emitting diodes (LEDs) are widely available, it is still challenging to grow green LED structures for emission at longer wavelengths due to the difficulty associated with the incorporation of In. The higher concentration of In may also affect the performance and reliability of the device. The reliability of green GaN LEDs with three different indium doping concentrations, with centre-wavelength of 520 nm, 540 nm and 550 nm, is studied in this paper. The electrical properties, including I-V characteristics, leakage current and 1/f noise were measured. The optical performance of the devices was also evaluated. The devices were subsequently subjected to a 1000 hours continuous stress test. The defect densities of the LED structures were also determined. Our results show that the 520 nm LED, which contains the lowest indium concentration in its quantum wells, produces highest optical output power at 20 mA. It also degrades slower than 540 nm and 550 nm LEDs. © 2010 IOP Publishing Ltd.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/EJ/journal/confen_HK
dc.relation.ispartofJournal of Physics: Conference Seriesen_HK
dc.rightsJournal of Physics: Conference Series. Copyright © Institute of Physics Publishing.-
dc.subjectElectronics and devicesen_HK
dc.subjectSemiconductorsen_HK
dc.subjectSurfaces, interfaces and thin filmsen_HK
dc.subjectOptics, quantum optics and lasersen_HK
dc.subjectNanoscale science and low-D systemsen_HK
dc.titleReliability study on green InGaN/GaN light emitting diodesen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1742-6588&volume=209&issue=1, article no. 012065&spage=&epage=&date=2010&atitle=Reliability+study+on+green+InGaN/GaN+light+emitting+diodesen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailChoi, HW: hwchoi@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1088/1742-6596/209/1/012065en_HK
dc.identifier.scopuseid_2-s2.0-77950476985en_HK
dc.identifier.hkuros164113en_HK
dc.identifier.hkuros175228-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77950476985&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume209en_HK
dc.identifier.isiWOS:000283739100065-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLi, ZL=34167922900en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.citeulike6740768-
dc.customcontrol.immutablesml 140723-

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