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Article: Air-stability analysis and improvement of poly(3-hexylthiophene) field-effect transistors
| Title | Air-stability analysis and improvement of poly(3-hexylthiophene) field-effect transistors | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| Authors | |||||||||
| Keywords | Active layer Air stability Atmospheric water Carrier conduction Dry oxygen | ||||||||
| Issue Date | 2009 | ||||||||
| Publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst | ||||||||
| Citation | Semiconductor Science And Technology, 2009, v. 24 n. 9 How to Cite? | ||||||||
| Abstract | The influence of air, dry oxygen and humidity on the performance of a top-contact polymer field-effect transistor using poly(3-hexylthiophene) (P3HT) as an active layer is investigated. It is demonstrated that high relative humidity (92%) causes the device to degrade rapidly, while the influence of dry oxygen on the device is relatively small, indicating that the harmful influences are mainly the result of atmospheric water due to the enhancement of carrier conduction in the vicinity of the active-layer surface caused by the absorption of water molecules on the surface, rather than the p-type doping effect of O 2. A photoresist or paraffin layer is utilized as a passivation layer on top of the P3HT film, and the effects of the passivation layer on the performance and stability of the device are investigated. Results indicate that the passivation layer can effectively improve the stability of the device exposed to air, and enhance its field-effect mobility. © 2009 IOP Publishing Ltd. | ||||||||
| Persistent Identifier | http://hdl.handle.net/10722/124721 | ||||||||
| ISSN | 2021 Impact Factor: 2.048 2020 SCImago Journal Rankings: 0.712 | ||||||||
| ISI Accession Number ID |
Funding Information: The authors are deeply grateful to the Natural Science Foundation of Guangdong province (project no 8451064101000257), the RGC of HKSAR, China (project no HKU 7133/07E) and the URC for Seed Fund for Strategic Research Theme of HKU on Molecular Materials, for their financial support. | ||||||||
| References |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Liu, Y | en_HK |
| dc.contributor.author | Wu, L | en_HK |
| dc.contributor.author | Lai, PT | en_HK |
| dc.contributor.author | Zuo, Q | en_HK |
| dc.date.accessioned | 2010-10-31T10:50:22Z | - |
| dc.date.available | 2010-10-31T10:50:22Z | - |
| dc.date.issued | 2009 | en_HK |
| dc.identifier.citation | Semiconductor Science And Technology, 2009, v. 24 n. 9 | en_HK |
| dc.identifier.issn | 0268-1242 | en_HK |
| dc.identifier.uri | http://hdl.handle.net/10722/124721 | - |
| dc.description.abstract | The influence of air, dry oxygen and humidity on the performance of a top-contact polymer field-effect transistor using poly(3-hexylthiophene) (P3HT) as an active layer is investigated. It is demonstrated that high relative humidity (92%) causes the device to degrade rapidly, while the influence of dry oxygen on the device is relatively small, indicating that the harmful influences are mainly the result of atmospheric water due to the enhancement of carrier conduction in the vicinity of the active-layer surface caused by the absorption of water molecules on the surface, rather than the p-type doping effect of O 2. A photoresist or paraffin layer is utilized as a passivation layer on top of the P3HT film, and the effects of the passivation layer on the performance and stability of the device are investigated. Results indicate that the passivation layer can effectively improve the stability of the device exposed to air, and enhance its field-effect mobility. © 2009 IOP Publishing Ltd. | en_HK |
| dc.language | eng | en_HK |
| dc.publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst | en_HK |
| dc.relation.ispartof | Semiconductor Science and Technology | en_HK |
| dc.rights | Semiconductor Science and Technology. Copyright © Institute of Physics Publishing. | - |
| dc.subject | Active layer | - |
| dc.subject | Air stability | - |
| dc.subject | Atmospheric water | - |
| dc.subject | Carrier conduction | - |
| dc.subject | Dry oxygen | - |
| dc.title | Air-stability analysis and improvement of poly(3-hexylthiophene) field-effect transistors | en_HK |
| dc.type | Article | en_HK |
| dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0268-1242&volume=24&issue=9 article no. 095013&spage=&epage=&date=2009&atitle=Air-stability+analysis+and+improvement+of+poly(3-hexylthiophene)+field-effect+transistors | - |
| dc.identifier.email | Lai, PT:laip@eee.hku.hk | en_HK |
| dc.identifier.authority | Lai, PT=rp00130 | en_HK |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1088/0268-1242/24/9/095013 | en_HK |
| dc.identifier.scopus | eid_2-s2.0-77951582135 | en_HK |
| dc.identifier.hkuros | 179067 | en_HK |
| dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-77951582135&selection=ref&src=s&origin=recordpage | en_HK |
| dc.identifier.volume | 24 | en_HK |
| dc.identifier.issue | 9 | en_HK |
| dc.identifier.isi | WOS:000269292500014 | - |
| dc.publisher.place | United Kingdom | en_HK |
| dc.identifier.scopusauthorid | Liu, Y=36062331200 | en_HK |
| dc.identifier.scopusauthorid | Wu, L=7404903565 | en_HK |
| dc.identifier.scopusauthorid | Lai, PT=7202946460 | en_HK |
| dc.identifier.scopusauthorid | Zuo, Q=55245243200 | en_HK |
| dc.identifier.issnl | 0268-1242 | - |