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Article: Air-stability analysis and improvement of poly(3-hexylthiophene) field-effect transistors

TitleAir-stability analysis and improvement of poly(3-hexylthiophene) field-effect transistors
Authors
KeywordsActive layer
Air stability
Atmospheric water
Carrier conduction
Dry oxygen
Issue Date2009
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 2009, v. 24 n. 9 How to Cite?
AbstractThe influence of air, dry oxygen and humidity on the performance of a top-contact polymer field-effect transistor using poly(3-hexylthiophene) (P3HT) as an active layer is investigated. It is demonstrated that high relative humidity (92%) causes the device to degrade rapidly, while the influence of dry oxygen on the device is relatively small, indicating that the harmful influences are mainly the result of atmospheric water due to the enhancement of carrier conduction in the vicinity of the active-layer surface caused by the absorption of water molecules on the surface, rather than the p-type doping effect of O 2. A photoresist or paraffin layer is utilized as a passivation layer on top of the P3HT film, and the effects of the passivation layer on the performance and stability of the device are investigated. Results indicate that the passivation layer can effectively improve the stability of the device exposed to air, and enhance its field-effect mobility. © 2009 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/124721
ISSN
2015 Impact Factor: 2.098
2015 SCImago Journal Rankings: 0.676
ISI Accession Number ID
Funding AgencyGrant Number
Natural Science Foundation of Guangdong province8451064101000257
HKSAR, ChinaHKU 7133/07E
HKU on Molecular Materials
Funding Information:

The authors are deeply grateful to the Natural Science Foundation of Guangdong province (project no 8451064101000257), the RGC of HKSAR, China (project no HKU 7133/07E) and the URC for Seed Fund for Strategic Research Theme of HKU on Molecular Materials, for their financial support.

References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorWu, Len_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorZuo, Qen_HK
dc.date.accessioned2010-10-31T10:50:22Z-
dc.date.available2010-10-31T10:50:22Z-
dc.date.issued2009en_HK
dc.identifier.citationSemiconductor Science And Technology, 2009, v. 24 n. 9en_HK
dc.identifier.issn0268-1242en_HK
dc.identifier.urihttp://hdl.handle.net/10722/124721-
dc.description.abstractThe influence of air, dry oxygen and humidity on the performance of a top-contact polymer field-effect transistor using poly(3-hexylthiophene) (P3HT) as an active layer is investigated. It is demonstrated that high relative humidity (92%) causes the device to degrade rapidly, while the influence of dry oxygen on the device is relatively small, indicating that the harmful influences are mainly the result of atmospheric water due to the enhancement of carrier conduction in the vicinity of the active-layer surface caused by the absorption of water molecules on the surface, rather than the p-type doping effect of O 2. A photoresist or paraffin layer is utilized as a passivation layer on top of the P3HT film, and the effects of the passivation layer on the performance and stability of the device are investigated. Results indicate that the passivation layer can effectively improve the stability of the device exposed to air, and enhance its field-effect mobility. © 2009 IOP Publishing Ltd.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_HK
dc.relation.ispartofSemiconductor Science and Technologyen_HK
dc.rightsSemiconductor Science and Technology. Copyright © Institute of Physics Publishing.-
dc.subjectActive layer-
dc.subjectAir stability-
dc.subjectAtmospheric water-
dc.subjectCarrier conduction-
dc.subjectDry oxygen-
dc.titleAir-stability analysis and improvement of poly(3-hexylthiophene) field-effect transistorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0268-1242&volume=24&issue=9 article no. 095013&spage=&epage=&date=2009&atitle=Air-stability+analysis+and+improvement+of+poly(3-hexylthiophene)+field-effect+transistors-
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0268-1242/24/9/095013en_HK
dc.identifier.scopuseid_2-s2.0-77951582135en_HK
dc.identifier.hkuros179067en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77951582135&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume24en_HK
dc.identifier.issue9en_HK
dc.identifier.isiWOS:000269292500014-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLiu, Y=36062331200en_HK
dc.identifier.scopusauthoridWu, L=7404903565en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridZuo, Q=55245243200en_HK

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