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Article: Precision laser micromachining of trenches in GaN on sapphire

TitlePrecision laser micromachining of trenches in GaN on sapphire
Authors
KeywordsAblation thresholds
Bottom surfaces
Device isolation
Etch process
Fluences
Issue Date2010
PublisherAmerican Vacuum Society. The Journal's web site is located at http://www.avs.org/literature.jvst.b.aspx
Citation
Journal Of Vacuum Science And Technology B: Microelectronics And Nanometer Structures, 2010, v. 28 n. 2, p. 380-385 How to Cite?
AbstractTrench formation for device isolation on GaN light-emitting diode (LED) wafers via nanosecond ultraviolet laser micromachining is demonstrated. Trenches with smooth sidewalls and flat bottom surfaces are produced. Unlike wafer scribing with laser beams, the formation of trenches requires that the incident fluence is sufficient for laser ablation of GaN, yet low enough to prevent ablation of the sapphire substrate. Owing to the dissimilar ablation thresholds between GaN and sapphire, the etch process terminates automatically at the GaN/sapphire interface. The effect of the following parameters on the trench properties and quality has been investigated: focus offset, pulse energy, pulse repetition rate, scan speed, and the number of scan passes. It was found that optimal focus offset and pulse energy, a high pulse repetition rate, and single cycle of slow scanning are the key factors for obtaining a trench with tapered sidewall and smooth bottom surface, which is suitable for the laying of interconnects conformally across the trench for device interconnection. This technique has been successfully applied to the rapid prototyping of interconnected LED arrays on a single chip, where metal interconnects run continuously across the micromachined trenches to connect the individual LED devices. © 2010 American Vacuum Society.
Persistent Identifierhttp://hdl.handle.net/10722/124682
ISSN
2015 Impact Factor: 1.398
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorMak, GYen_HK
dc.contributor.authorLam, EYen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2010-10-31T10:48:15Z-
dc.date.available2010-10-31T10:48:15Z-
dc.date.issued2010en_HK
dc.identifier.citationJournal Of Vacuum Science And Technology B: Microelectronics And Nanometer Structures, 2010, v. 28 n. 2, p. 380-385en_HK
dc.identifier.issn1071-1023en_HK
dc.identifier.urihttp://hdl.handle.net/10722/124682-
dc.description.abstractTrench formation for device isolation on GaN light-emitting diode (LED) wafers via nanosecond ultraviolet laser micromachining is demonstrated. Trenches with smooth sidewalls and flat bottom surfaces are produced. Unlike wafer scribing with laser beams, the formation of trenches requires that the incident fluence is sufficient for laser ablation of GaN, yet low enough to prevent ablation of the sapphire substrate. Owing to the dissimilar ablation thresholds between GaN and sapphire, the etch process terminates automatically at the GaN/sapphire interface. The effect of the following parameters on the trench properties and quality has been investigated: focus offset, pulse energy, pulse repetition rate, scan speed, and the number of scan passes. It was found that optimal focus offset and pulse energy, a high pulse repetition rate, and single cycle of slow scanning are the key factors for obtaining a trench with tapered sidewall and smooth bottom surface, which is suitable for the laying of interconnects conformally across the trench for device interconnection. This technique has been successfully applied to the rapid prototyping of interconnected LED arrays on a single chip, where metal interconnects run continuously across the micromachined trenches to connect the individual LED devices. © 2010 American Vacuum Society.en_HK
dc.languageengen_HK
dc.publisherAmerican Vacuum Society. The Journal's web site is located at http://www.avs.org/literature.jvst.b.aspxen_HK
dc.relation.ispartofJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structuresen_HK
dc.subjectAblation thresholds-
dc.subjectBottom surfaces-
dc.subjectDevice isolation-
dc.subjectEtch process-
dc.subjectFluences-
dc.titlePrecision laser micromachining of trenches in GaN on sapphireen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1071-1023&volume=28&issue=2&spage=380&epage=385&date=2010&atitle=Precision+laser+micromachining+of+trenches+in+GaN+on+sapphire-
dc.identifier.emailLam, EY:elam@eee.hku.hken_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityLam, EY=rp00131en_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1116/1.3359593en_HK
dc.identifier.scopuseid_2-s2.0-77950563661en_HK
dc.identifier.hkuros175225en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77950563661&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume28en_HK
dc.identifier.issue2en_HK
dc.identifier.spage380en_HK
dc.identifier.epage385en_HK
dc.identifier.isiWOS:000276275100022-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridMak, GY=8678365200en_HK
dc.identifier.scopusauthoridLam, EY=7102890004en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK

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