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Conference Paper: Failure analysis of InGaN/GaN LEDs with emission wavelength between 440 nm and 550 nm

TitleFailure analysis of InGaN/GaN LEDs with emission wavelength between 440 nm and 550 nm
Authors
KeywordsDislocations
Electrical properties
InGaN/GaN
LEDs
Quantum wells
Issue Date2010
PublisherWiley - VCH Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628
Citation
The 8th International Conference on Nitride Semiconductor (ICNS-8), Jeju Island, Korea, 18-23 October 2009. In Physica Status Solidi (C) Current Topics In Solid State Physics, 2010, v. 7 n. 7-8, p. 2202-2204 How to Cite?
AbstractWhile longer wavelength emission from InGaN/GaN light-emitting diodes can be achieved by increasing the Indium (In) content in the qunatum wells, the increased In content gives rise to side-effects to the material and device performance and reliability. It was found that the induced strain in the wafer and the density of threading dislocations increases with increasing In content. From current-voltage and 1/f noise measurements, it was observed that the leakage currents, static resistance and noise magnitudes rises monotonically with increasing emission wavelength (In composition), which can be attributed to higher defect concentrations. After undergoing a 1000-hr reliability test, it was discovered that the optical degradation rates for the longer wavelength green LEDs were significantly higher than those of shorter wavelength. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.
DescriptionThere journal issues entitled: Special Issue: 8th International Conference on Nitride Semiconductors (ICNS-8)
Persistent Identifierhttp://hdl.handle.net/10722/124665
ISSN
2015 SCImago Journal Rankings: 0.392
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, ZLen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2010-10-31T10:47:20Z-
dc.date.available2010-10-31T10:47:20Z-
dc.date.issued2010en_HK
dc.identifier.citationThe 8th International Conference on Nitride Semiconductor (ICNS-8), Jeju Island, Korea, 18-23 October 2009. In Physica Status Solidi (C) Current Topics In Solid State Physics, 2010, v. 7 n. 7-8, p. 2202-2204en_HK
dc.identifier.issn1862-6351en_HK
dc.identifier.urihttp://hdl.handle.net/10722/124665-
dc.descriptionThere journal issues entitled: Special Issue: 8th International Conference on Nitride Semiconductors (ICNS-8)-
dc.description.abstractWhile longer wavelength emission from InGaN/GaN light-emitting diodes can be achieved by increasing the Indium (In) content in the qunatum wells, the increased In content gives rise to side-effects to the material and device performance and reliability. It was found that the induced strain in the wafer and the density of threading dislocations increases with increasing In content. From current-voltage and 1/f noise measurements, it was observed that the leakage currents, static resistance and noise magnitudes rises monotonically with increasing emission wavelength (In composition), which can be attributed to higher defect concentrations. After undergoing a 1000-hr reliability test, it was discovered that the optical degradation rates for the longer wavelength green LEDs were significantly higher than those of shorter wavelength. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.en_HK
dc.languageengen_HK
dc.publisherWiley - VCH Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628en_HK
dc.relation.ispartofPhysica Status Solidi (C) Current Topics in Solid State Physicsen_HK
dc.subjectDislocationsen_HK
dc.subjectElectrical propertiesen_HK
dc.subjectInGaN/GaNen_HK
dc.subjectLEDsen_HK
dc.subjectQuantum wellsen_HK
dc.titleFailure analysis of InGaN/GaN LEDs with emission wavelength between 440 nm and 550 nmen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1862-6351&volume=7&issue=7-8&spage=2202&epage=2204&date=2010&atitle=Failure+analysis+of+InGaN/GaN+LEDs+with+emission+wavelength+between+440+nm+and+550+nm-
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/pssc.200983466en_HK
dc.identifier.scopuseid_2-s2.0-77955803558en_HK
dc.identifier.hkuros175220en_HK
dc.identifier.hkuros175255-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77955803558&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume7en_HK
dc.identifier.issue7-8en_HK
dc.identifier.spage2202en_HK
dc.identifier.epage2204en_HK
dc.identifier.isiWOS:000301587600140-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridLi, ZL=34167922900en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.customcontrol.immutablesml 151028 - merged-

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