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Article: Organic field-effect transistors fabricated with N, N′ -substituted dialkyl-1,3,8,10-tetramethylquinacridone compounds
Title | Organic field-effect transistors fabricated with N, N′ -substituted dialkyl-1,3,8,10-tetramethylquinacridone compounds | ||||||||
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Authors | |||||||||
Keywords | Physics engineering | ||||||||
Issue Date | 2009 | ||||||||
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | ||||||||
Citation | Applied Physics Letters, 2009, v. 95 n. 12, article no. 123305 How to Cite? | ||||||||
Abstract | A series of robust and inexpensive p -type organic semiconductors 1,3,8,10-tetramethyl quinacridone compounds was prepared. These quinacridone compounds bearing N, N′ -disubstituted long N -alkyl chains self-organize into highly oriented crystalline films, leading to high performance organic thin film transistors with the best field-effect mobility, on/off ratio, and threshold voltage being 1.6× 10-1 cm2 V-1 s-1, 1× 104, and -17 V, respectively. The effects of methyl substituent and N -alkyl chain length of the quinacridone compounds together with the molecular packing on the field-effect mobility are discussed. © 2009 American Institute of Physics. | ||||||||
Persistent Identifier | http://hdl.handle.net/10722/124070 | ||||||||
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 | ||||||||
ISI Accession Number ID |
Funding Information: This work was supported by The Chinese Academy of Sciences-Croucher Foundation Funding Scheme for Joint Laboratories and HKU Seed Funding for Strategic Research Theme-Molecular Materials. We acknowledge Clover & Sunic Systems Ltd. for their support with the fabrication system housed at The University of Hong Kong (Grant No. HKU 200807176003). | ||||||||
References |
DC Field | Value | Language |
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dc.contributor.author | Xu, ZX | en_HK |
dc.contributor.author | Xiang, HF | en_HK |
dc.contributor.author | Roy, VAL | en_HK |
dc.contributor.author | Chui, SSY | en_HK |
dc.contributor.author | Wang, Y | en_HK |
dc.contributor.author | Lai, PT | en_HK |
dc.contributor.author | Che, CM | en_HK |
dc.date.accessioned | 2010-10-20T03:18:53Z | - |
dc.date.available | 2010-10-20T03:18:53Z | - |
dc.date.issued | 2009 | en_HK |
dc.identifier.citation | Applied Physics Letters, 2009, v. 95 n. 12, article no. 123305 | - |
dc.identifier.issn | 0003-6951 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/124070 | - |
dc.description.abstract | A series of robust and inexpensive p -type organic semiconductors 1,3,8,10-tetramethyl quinacridone compounds was prepared. These quinacridone compounds bearing N, N′ -disubstituted long N -alkyl chains self-organize into highly oriented crystalline films, leading to high performance organic thin film transistors with the best field-effect mobility, on/off ratio, and threshold voltage being 1.6× 10-1 cm2 V-1 s-1, 1× 104, and -17 V, respectively. The effects of methyl substituent and N -alkyl chain length of the quinacridone compounds together with the molecular packing on the field-effect mobility are discussed. © 2009 American Institute of Physics. | en_HK |
dc.language | eng | - |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_HK |
dc.relation.ispartof | Applied Physics Letters | en_HK |
dc.rights | Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2009, v. 95 n. 12, article no. 123305 and may be found at https://doi.org/10.1063/1.3233961 | - |
dc.subject | Physics engineering | - |
dc.title | Organic field-effect transistors fabricated with N, N′ -substituted dialkyl-1,3,8,10-tetramethylquinacridone compounds | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=95&issue=12 article no. 123305&spage=&epage=&date=2009&atitle=Organic+field-effect+transistors+fabricated+with+N,N%27-substituted+dialkyl-1,3,8,10-tetramethylquinacridone+compounds | - |
dc.identifier.email | Xiang, HF: hfxiang@eee.hku.hk | en_HK |
dc.identifier.email | Chui, SSY: chuissy@hkucc.hku.hk | en_HK |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | en_HK |
dc.identifier.email | Che, CM: cmche@hku.hk | en_HK |
dc.identifier.authority | Xiang, HF=rp00196 | en_HK |
dc.identifier.authority | Chui, SSY=rp00686 | en_HK |
dc.identifier.authority | Lai, PT=rp00130 | en_HK |
dc.identifier.authority | Che, CM=rp00670 | en_HK |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1063/1.3233961 | en_HK |
dc.identifier.scopus | eid_2-s2.0-70349661873 | en_HK |
dc.identifier.hkuros | 172619 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-70349661873&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 95 | en_HK |
dc.identifier.issue | 12 | en_HK |
dc.identifier.spage | article no. 123305 | - |
dc.identifier.epage | article no. 123305 | - |
dc.identifier.isi | WOS:000270243800080 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Xu, ZX=8726524500 | en_HK |
dc.identifier.scopusauthorid | Xiang, HF=23065758900 | en_HK |
dc.identifier.scopusauthorid | Roy, VAL=7005870324 | en_HK |
dc.identifier.scopusauthorid | Chui, SSY=8297453100 | en_HK |
dc.identifier.scopusauthorid | Wang, Y=7601489257 | en_HK |
dc.identifier.scopusauthorid | Lai, PT=7202946460 | en_HK |
dc.identifier.scopusauthorid | Che, CM=7102442791 | en_HK |
dc.identifier.issnl | 0003-6951 | - |