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Article: Magnetically tunable properties related with carriers density in self-doped La1−xMnO3/y wt %Nb-SrTiO3 heteroepitaxial junctions

TitleMagnetically tunable properties related with carriers density in self-doped La1−xMnO3/y wt %Nb-SrTiO3 heteroepitaxial junctions
Authors
KeywordsPhysics engineering
Issue Date2010
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2010, v. 107 n. 9 article no. 09C704 How to Cite?
AbstractThe self-doped La1−xMnO3 (x=0.1 and 0.3) thin films deposited on Nb-doped (wt % y) SrTiO3 (y=0.05 and 0.8) crystals to form heteroepitaxial junctions have been prepared by the pulse laser deposition method. The current-voltage loops of junction were measured at several fixed magnetic fields for the temperature from 10 to 300 K. We have focused on the effects of doping level and annealing time on the magnetically tunable property of the junction. The results show that these junctions have a typical temperature-dependent rectifying characteristics and asymmetrical hysteresis. The magnetically tunable property of the junction was related with the annealing time for the self-doped La1−xMnO3−δ thin film and the doping level in the Nb-doped SrTiO3 (STON) crystal. In the self-doped La0.9MnO3/0.05-STON junction annealed at 900 °C for 5 h, the relative ratio of voltage [Vb(0)−Vb(H)] /Vb(0) is about 70% at H=6 T and T=70 K for I=0.1 mA, showing a large magnetically tunable property. These results reveal the great potential of the manganites in configuring artificial devices.
Persistent Identifierhttp://hdl.handle.net/10722/123868
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, ZH-
dc.contributor.authorYu, GL-
dc.contributor.authorQiu, L-
dc.contributor.authorWu, XS-
dc.contributor.authorWang, L-
dc.contributor.authorGao, J-
dc.date.accessioned2010-10-06T08:35:21Z-
dc.date.available2010-10-06T08:35:21Z-
dc.date.issued2010-
dc.identifier.citationJournal of Applied Physics, 2010, v. 107 n. 9 article no. 09C704-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10722/123868-
dc.description.abstractThe self-doped La1−xMnO3 (x=0.1 and 0.3) thin films deposited on Nb-doped (wt % y) SrTiO3 (y=0.05 and 0.8) crystals to form heteroepitaxial junctions have been prepared by the pulse laser deposition method. The current-voltage loops of junction were measured at several fixed magnetic fields for the temperature from 10 to 300 K. We have focused on the effects of doping level and annealing time on the magnetically tunable property of the junction. The results show that these junctions have a typical temperature-dependent rectifying characteristics and asymmetrical hysteresis. The magnetically tunable property of the junction was related with the annealing time for the self-doped La1−xMnO3−δ thin film and the doping level in the Nb-doped SrTiO3 (STON) crystal. In the self-doped La0.9MnO3/0.05-STON junction annealed at 900 °C for 5 h, the relative ratio of voltage [Vb(0)−Vb(H)] /Vb(0) is about 70% at H=6 T and T=70 K for I=0.1 mA, showing a large magnetically tunable property. These results reveal the great potential of the manganites in configuring artificial devices.-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp-
dc.relation.ispartofJournal of Applied Physics-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.-
dc.rightsCopyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2010, v. 107 n. 9 article no. 09C704 and may be found at http://jap.aip.org/resource/1/japiau/v107/i9/p09C704_s1-
dc.subjectPhysics engineering-
dc.titleMagnetically tunable properties related with carriers density in self-doped La1−xMnO3/y wt %Nb-SrTiO3 heteroepitaxial junctionsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=107&issue=9&spage=09C704&epage=&date=2010&atitle=Magnetically+tunable+properties+related+with+carriers+density+in+self-doped+La1−xMnO3/y+wt+%Nb-SrTiO3+heteroepitaxial+junctions-
dc.identifier.emailWang, ZH: zhwang@nju.edu.cn-
dc.identifier.emailGao, J: jugao@hku.hk-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3358597-
dc.identifier.scopuseid_2-s2.0-77951695388-
dc.identifier.hkuros181517-
dc.identifier.volume107-
dc.identifier.issue9 article no. 09C704-
dc.identifier.isiWOS:000277834300249-

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