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Article: Reactive interface formation and Co-induced (√7×√7 ) superstructure on a GaN(0001) pseudo- (1×1 ) substrate surface

TitleReactive interface formation and Co-induced (√7×√7 ) superstructure on a GaN(0001) pseudo- (1×1 ) substrate surface
Authors
KeywordsPhysics
Issue Date2010
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2010, v. 81 n. 23 How to Cite?
AbstractDeposition of Co on GaN(0001) pseudo- (1×1) surface at room temperature by molecular-beam epitaxy is studied by low-energy electron diffraction, scanning-tunneling microscopy and first-principles total energy calculations. Reactive interface formation where the deposited Co reacts with Ga on GaN substrate forming CoGax (x∼2) compound or alloy can be inferred from surface morphology evolution and mass consideration. At an intermediate coverage about 0.4 monolayers, a specific (√7×√7) surface structural phase develops, as observed by both low-energy electron diffraction and scanning tunneling microscopy studies. First-principles total energy calculations suggest that the (√7×√7) structure is induced by Co-trimers located slightly below the topmost Ga adlayer of the substrate. © 2010 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/123857
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID
Funding AgencyGrant Number
NSFC/RGCN_HKU705/07
Funding Information:

We acknowledge the financial support of the NSFC/RGC Joint Research Scheme under Grant No. N_HKU705/07.

References

 

DC FieldValueLanguage
dc.contributor.authorLi, HDen_HK
dc.contributor.authorZhong, GHen_HK
dc.contributor.authorLin, HQen_HK
dc.contributor.authorXie, MHen_HK
dc.date.accessioned2010-10-05T06:25:07Z-
dc.date.available2010-10-05T06:25:07Z-
dc.date.issued2010en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2010, v. 81 n. 23en_HK
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/123857-
dc.description.abstractDeposition of Co on GaN(0001) pseudo- (1×1) surface at room temperature by molecular-beam epitaxy is studied by low-energy electron diffraction, scanning-tunneling microscopy and first-principles total energy calculations. Reactive interface formation where the deposited Co reacts with Ga on GaN substrate forming CoGax (x∼2) compound or alloy can be inferred from surface morphology evolution and mass consideration. At an intermediate coverage about 0.4 monolayers, a specific (√7×√7) surface structural phase develops, as observed by both low-energy electron diffraction and scanning tunneling microscopy studies. First-principles total energy calculations suggest that the (√7×√7) structure is induced by Co-trimers located slightly below the topmost Ga adlayer of the substrate. © 2010 The American Physical Society.en_HK
dc.languageeng-
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review B (Condensed Matter and Materials Physics . Copyright © American Physical Society.-
dc.subjectPhysics-
dc.titleReactive interface formation and Co-induced (√7×√7 ) superstructure on a GaN(0001) pseudo- (1×1 ) substrate surfaceen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=81&issue=23&spage=article no. 233302&epage=&date=2010&atitle=Reactive+interface+formation+and+Co-induced+(√7×√7)+superstructure+on+a+GaN(0001)+pseudo-(1×1)+substrate+surface-
dc.identifier.emailLi, HD: hdli1978@hkucc.hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityLi, HD=rp00739en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevB.81.233302en_HK
dc.identifier.scopuseid_2-s2.0-77956319525en_HK
dc.identifier.hkuros170682-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77956319525&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume81en_HK
dc.identifier.issue23en_HK
dc.identifier.eissn1550-235x-
dc.identifier.isiWOS:000278482600001-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, HD=36441549600en_HK
dc.identifier.scopusauthoridZhong, GH=16232115900en_HK
dc.identifier.scopusauthoridLin, HQ=26642906700en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK

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