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Book Chapter: Doping of wide band gap nanostructures: ZnO and GaN
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TitleDoping of wide band gap nanostructures: ZnO and GaN
 
AuthorsDjurisic, A
Xie, MH
Leung, YH
 
Issue Date2010
 
PublisherAmerican Scientific Publishers
 
CitationDoping of wide band gap nanostructures: ZnO and GaN. In Chen, W (Ed.), Doped nanomaterials and nanodevices. Vol. 1, Luminescence and applications, p. 101-133. Stevenson Ranch, Calif.: American Scientific Publishers, 2010 [How to Cite?]
 
ISBN9781588831071
 
DC FieldValue
dc.contributor.authorDjurisic, A
 
dc.contributor.authorXie, MH
 
dc.contributor.authorLeung, YH
 
dc.date.accessioned2010-09-26T09:09:36Z
 
dc.date.available2010-09-26T09:09:36Z
 
dc.date.issued2010
 
dc.identifier.citationDoping of wide band gap nanostructures: ZnO and GaN. In Chen, W (Ed.), Doped nanomaterials and nanodevices. Vol. 1, Luminescence and applications, p. 101-133. Stevenson Ranch, Calif.: American Scientific Publishers, 2010 [How to Cite?]
 
dc.identifier.epage133
 
dc.identifier.hkuros170019
 
dc.identifier.isbn9781588831071
 
dc.identifier.spage101
 
dc.identifier.urihttp://hdl.handle.net/10722/119794
 
dc.languageeng
 
dc.publisherAmerican Scientific Publishers
 
dc.publisher.placeStevenson Ranch, Calif.
 
dc.relation.ispartofDoped nanomaterials and nanodevices. Vol. 1, Luminescence and applications
 
dc.titleDoping of wide band gap nanostructures: ZnO and GaN
 
dc.typeBook_Chapter
 
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