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Article: Recent advances in defect characterization in 6H-SiC using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy

TitleRecent advances in defect characterization in 6H-SiC using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy
Authors
Issue Date2000
PublisherTrans Tech Publications. The Journal's web site is located at http://www.ttp.net/1012-0386.html
Citation
Diffusion And Defect Data. Pt A Defect And Diffusion Forum, 2000, v. 183, p. 1-24 How to Cite?
AbstractDeep Level Transient Spectroscopy and Positron Annihilation Spectroscopy are two major techniques currently used in studying point defects in 6H-SiC. These techniques are briefly described. A review of studies on asgrown, electron-irradiated and ion-implanted 6H-SiC is made. Studies employing Deep Level Transient Spectroscopy are considered first followed by those employing Positron Annihilation Spectroscopy. Finally some general conclusions are drawn regarding what has been learnt in recent years from information gained by both techniques.
Persistent Identifierhttp://hdl.handle.net/10722/119789
ISSN
2005 Impact Factor: 0.483
2015 SCImago Journal Rankings: 0.221
References

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-09-26T09:09:21Z-
dc.date.available2010-09-26T09:09:21Z-
dc.date.issued2000en_HK
dc.identifier.citationDiffusion And Defect Data. Pt A Defect And Diffusion Forum, 2000, v. 183, p. 1-24en_HK
dc.identifier.issn1012-0386en_HK
dc.identifier.urihttp://hdl.handle.net/10722/119789-
dc.description.abstractDeep Level Transient Spectroscopy and Positron Annihilation Spectroscopy are two major techniques currently used in studying point defects in 6H-SiC. These techniques are briefly described. A review of studies on asgrown, electron-irradiated and ion-implanted 6H-SiC is made. Studies employing Deep Level Transient Spectroscopy are considered first followed by those employing Positron Annihilation Spectroscopy. Finally some general conclusions are drawn regarding what has been learnt in recent years from information gained by both techniques.en_HK
dc.languageengen_HK
dc.publisherTrans Tech Publications. The Journal's web site is located at http://www.ttp.net/1012-0386.htmlen_HK
dc.relation.ispartofDiffusion and Defect Data. Pt A Defect and Diffusion Forumen_HK
dc.titleRecent advances in defect characterization in 6H-SiC using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopyen_HK
dc.typeArticleen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0033697982en_HK
dc.identifier.hkuros55022en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0033697982&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume183en_HK
dc.identifier.spage1en_HK
dc.identifier.epage24en_HK
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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