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Article: Recent advances in defect characterization in 6H-SiC using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy
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TitleRecent advances in defect characterization in 6H-SiC using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy
 
AuthorsLing, CC1
Beling, CD1
Gong, M2
Chen, XD1
Fung, S1
 
Issue Date2000
 
PublisherTrans Tech Publications. The Journal's web site is located at http://www.ttp.net/1012-0386.html
 
CitationDiffusion And Defect Data. Pt A Defect And Diffusion Forum, 2000, v. 183, p. 1-24 [How to Cite?]
 
AbstractDeep Level Transient Spectroscopy and Positron Annihilation Spectroscopy are two major techniques currently used in studying point defects in 6H-SiC. These techniques are briefly described. A review of studies on asgrown, electron-irradiated and ion-implanted 6H-SiC is made. Studies employing Deep Level Transient Spectroscopy are considered first followed by those employing Positron Annihilation Spectroscopy. Finally some general conclusions are drawn regarding what has been learnt in recent years from information gained by both techniques.
 
ISSN1012-0386
2013 SCImago Journal Rankings: 0.211
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorLing, CC
 
dc.contributor.authorBeling, CD
 
dc.contributor.authorGong, M
 
dc.contributor.authorChen, XD
 
dc.contributor.authorFung, S
 
dc.date.accessioned2010-09-26T09:09:21Z
 
dc.date.available2010-09-26T09:09:21Z
 
dc.date.issued2000
 
dc.description.abstractDeep Level Transient Spectroscopy and Positron Annihilation Spectroscopy are two major techniques currently used in studying point defects in 6H-SiC. These techniques are briefly described. A review of studies on asgrown, electron-irradiated and ion-implanted 6H-SiC is made. Studies employing Deep Level Transient Spectroscopy are considered first followed by those employing Positron Annihilation Spectroscopy. Finally some general conclusions are drawn regarding what has been learnt in recent years from information gained by both techniques.
 
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dc.identifier.citationDiffusion And Defect Data. Pt A Defect And Diffusion Forum, 2000, v. 183, p. 1-24 [How to Cite?]
 
dc.identifier.epage24
 
dc.identifier.hkuros55022
 
dc.identifier.issn1012-0386
2013 SCImago Journal Rankings: 0.211
 
dc.identifier.scopuseid_2-s2.0-0033697982
 
dc.identifier.spage1
 
dc.identifier.urihttp://hdl.handle.net/10722/119789
 
dc.identifier.volume183
 
dc.languageeng
 
dc.publisherTrans Tech Publications. The Journal's web site is located at http://www.ttp.net/1012-0386.html
 
dc.publisher.placeSwitzerland
 
dc.relation.ispartofDiffusion and Defect Data. Pt A Defect and Diffusion Forum
 
dc.relation.referencesReferences in Scopus
 
dc.titleRecent advances in defect characterization in 6H-SiC using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy
 
dc.typeArticle
 
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Author Affiliations
  1. The University of Hong Kong
  2. Sichuan University