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Conference Paper: Emissions from defects in thin GaN epilayers grown on vicinal 4H-SiC substrates

TitleEmissions from defects in thin GaN epilayers grown on vicinal 4H-SiC substrates
Authors
Issue Date2003
PublisherIEEE.
Citation
2002 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings, p. 95-98 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/109827

 

DC FieldValueLanguage
dc.contributor.authorXu, Sen_HK
dc.contributor.authorWang, HJen_HK
dc.contributor.authorCheung, SHen_HK
dc.contributor.authorLi, Qen_HK
dc.contributor.authorDai, Xen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorTong, DSYen_HK
dc.date.accessioned2010-09-26T01:38:58Z-
dc.date.available2010-09-26T01:38:58Z-
dc.date.issued2003en_HK
dc.identifier.citation2002 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings, p. 95-98en_HK
dc.identifier.urihttp://hdl.handle.net/10722/109827-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartof2002 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedingsen_HK
dc.titleEmissions from defects in thin GaN epilayers grown on vicinal 4H-SiC substratesen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailXu, S: sjxu@hkucc.hku.hken_HK
dc.identifier.emailLi, Q: qlia@graduate.hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hkusua.hku.hken_HK
dc.identifier.emailTong, DSY: dsytong@hkucc.hku.hken_HK
dc.identifier.authorityXu, S=rp00821en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.hkuros80259en_HK
dc.identifier.spage95en_HK
dc.identifier.epage98en_HK

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