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Conference Paper: Characterization of oxide thin films using optical techniques

TitleCharacterization of oxide thin films using optical techniques
Authors
KeywordsThin films
Oxides
Optical analysis
Microstructure
Issue Date2006
PublisherElsevier B.V.
Citation
European Materials Research Society (E-MRS) Spring Meeting, Strasbourg, France, 31 May–3 June 2005. In Applied Surface Science, 2006, v. 253 n. 1, p. 372–375 How to Cite?
AbstractThin films of oxide materials are playing a growing role as critical elements in optoelectronic devices and nanoscale devices. In this work, thin films of some typical oxides such as WO3, Ga2O3 and SrTiO3 were investigated. We present measurements of those films, using various optical techniques like photoconductivity transients over a wide time range and photo-Hall measurements. Analysis of the photo-Hall and photoconductivity data permits the determination of the contribution to the photoconductivity made by the carrier mobility and concentration. A model for dispersive carrier transport was proposed to explain the relaxation of the photoconductivity in oxide thin films. In addition, photoluminescence characterization was used to study microstructures and energy band in oxide thin films. The broad emission from oxide host, consisting of several band peaks, was likely due to a recombination process with several possible paths. The dependence of the luminescent intensity on the annealing atmosphere was associated with the presence of oxygen vacancies. It is suggested that our optical analysis efforts have improved the understanding of oxide thin films, and this should lead to the necessary advancements in a variety of devices.
Persistent Identifierhttp://hdl.handle.net/10722/109798
ISSN
2015 Impact Factor: 3.15
2015 SCImago Journal Rankings: 0.930

 

DC FieldValueLanguage
dc.contributor.authorHao, JHen_HK
dc.contributor.authorGao, Jen_HK
dc.date.accessioned2010-09-26T01:37:43Z-
dc.date.available2010-09-26T01:37:43Z-
dc.date.issued2006en_HK
dc.identifier.citationEuropean Materials Research Society (E-MRS) Spring Meeting, Strasbourg, France, 31 May–3 June 2005. In Applied Surface Science, 2006, v. 253 n. 1, p. 372–375-
dc.identifier.issn0169-4332-
dc.identifier.urihttp://hdl.handle.net/10722/109798-
dc.description.abstractThin films of oxide materials are playing a growing role as critical elements in optoelectronic devices and nanoscale devices. In this work, thin films of some typical oxides such as WO3, Ga2O3 and SrTiO3 were investigated. We present measurements of those films, using various optical techniques like photoconductivity transients over a wide time range and photo-Hall measurements. Analysis of the photo-Hall and photoconductivity data permits the determination of the contribution to the photoconductivity made by the carrier mobility and concentration. A model for dispersive carrier transport was proposed to explain the relaxation of the photoconductivity in oxide thin films. In addition, photoluminescence characterization was used to study microstructures and energy band in oxide thin films. The broad emission from oxide host, consisting of several band peaks, was likely due to a recombination process with several possible paths. The dependence of the luminescent intensity on the annealing atmosphere was associated with the presence of oxygen vacancies. It is suggested that our optical analysis efforts have improved the understanding of oxide thin films, and this should lead to the necessary advancements in a variety of devices.-
dc.languageengen_HK
dc.publisherElsevier B.V.-
dc.relation.ispartofApplied Surface Scienceen_HK
dc.subjectThin films-
dc.subjectOxides-
dc.subjectOptical analysis-
dc.subjectMicrostructure-
dc.titleCharacterization of oxide thin films using optical techniquesen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailHao, JH: jhhao@hku.hken_HK
dc.identifier.emailGao, J: jugao@hku.hken_HK
dc.identifier.authorityGao, J=rp00699en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.apsusc.2006.06.016-
dc.identifier.hkuros112177en_HK

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