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Conference Paper: Positron mobility and interface defect studies in semi-insulating GaAs using the lifetime technique

TitlePositron mobility and interface defect studies in semi-insulating GaAs using the lifetime technique
Authors
Issue Date1995
PublisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.net
Citation
Materials Science Forum, 1995, v. 175-178 pt 1, p. 517-520 How to Cite?
AbstractMeasurements of positron mobility in semi-insulating GaAs using the lifetime technique have been carried out with applied electric fields in the samples directed towards and away from the positron injecting contact. Micro-void defects at the Au/GaAs interface having a characteristic of lifetime of 395ps have been observed. The large increasing trend in the intensity of the interface lifetime component as the field is directed towards the contact is well explained by a two value electric field model and the data is found to be consistent with a positron mobility value of 60 cm2V-1s-1. We point out that such a large fraction of positrons annihilating from the metal-semiconductor interface allows a study of interface positron states to be made without resorting to the use of a positron beam.
Persistent Identifierhttp://hdl.handle.net/10722/109773
ISSN
2005 Impact Factor: 0.399

 

DC FieldValueLanguage
dc.contributor.authorShan, YYen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorAu, HLen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorWang, YYen_HK
dc.date.accessioned2010-09-26T01:36:39Z-
dc.date.available2010-09-26T01:36:39Z-
dc.date.issued1995en_HK
dc.identifier.citationMaterials Science Forum, 1995, v. 175-178 pt 1, p. 517-520en_HK
dc.identifier.issn0255-5476en_HK
dc.identifier.urihttp://hdl.handle.net/10722/109773-
dc.description.abstractMeasurements of positron mobility in semi-insulating GaAs using the lifetime technique have been carried out with applied electric fields in the samples directed towards and away from the positron injecting contact. Micro-void defects at the Au/GaAs interface having a characteristic of lifetime of 395ps have been observed. The large increasing trend in the intensity of the interface lifetime component as the field is directed towards the contact is well explained by a two value electric field model and the data is found to be consistent with a positron mobility value of 60 cm2V-1s-1. We point out that such a large fraction of positrons annihilating from the metal-semiconductor interface allows a study of interface positron states to be made without resorting to the use of a positron beam.en_HK
dc.languageengen_HK
dc.publisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.neten_HK
dc.relation.ispartofMaterials Science Forumen_HK
dc.titlePositron mobility and interface defect studies in semi-insulating GaAs using the lifetime techniqueen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0029211566en_HK
dc.identifier.hkuros3308en_HK
dc.identifier.volume175-178en_HK
dc.identifier.issuept 1en_HK
dc.identifier.spage517en_HK
dc.identifier.epage520en_HK
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridShan, YY=7203036700en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridAu, HL=7004152230en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridWang, YY=7601511509en_HK

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