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Conference Paper: Anisotropic Ambipolar Diffusion of Carriers in InGaN/GaN Quantum Wells

TitleAnisotropic Ambipolar Diffusion of Carriers in InGaN/GaN Quantum Wells
Authors
Wang, YXu, SJLi, Q
Issue Date2006
PublisherJohn Wiley & Sons, Inc.
Citation
The 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany, 28 August-2 September 2005. In Physica Status Solidi (C), 2006, v. 3 n. 6, p. 1988-1991 How to Cite?
DOI: http://dx.doi.org/10.1002/pssc.200565244
AbstractBy directly imaging the photoluminescence of the samples, we observe strong anisotropic lateral diffusion of photogenerated carriers in InGaN/GaN quantum-wells structures. For quantitative interpretation of the phenomenon, the ambipolar diffusion of carriers in such structures is calculated using the two-dimensional drift-diffusion equation when the huge piezoelectric field in the strained InGaN/GaN quantum wells is taken into account. Very good agreement between theory and experiment is achieved. Our results show that the strong piezoelectric field and crystalline direction dependence of the carrier mobility are responsible for the enhancement and anisotropy of carriers' lateral diffusion, respectively. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Persistent Identifierhttp://hdl.handle.net/10722/109764
ISSN
1610-1642
2020 SCImago Journal Rankings: 0.210
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorWang, Yen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorLi, Q-
dc.date.accessioned2010-09-26T01:36:16Z-
dc.date.available2010-09-26T01:36:16Z-
dc.date.issued2006en_HK
dc.identifier.citationThe 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany, 28 August-2 September 2005. In Physica Status Solidi (C), 2006, v. 3 n. 6, p. 1988-1991-
dc.identifier.issn1610-1642-
dc.identifier.urihttp://hdl.handle.net/10722/109764-
dc.description.abstractBy directly imaging the photoluminescence of the samples, we observe strong anisotropic lateral diffusion of photogenerated carriers in InGaN/GaN quantum-wells structures. For quantitative interpretation of the phenomenon, the ambipolar diffusion of carriers in such structures is calculated using the two-dimensional drift-diffusion equation when the huge piezoelectric field in the strained InGaN/GaN quantum wells is taken into account. Very good agreement between theory and experiment is achieved. Our results show that the strong piezoelectric field and crystalline direction dependence of the carrier mobility are responsible for the enhancement and anisotropy of carriers' lateral diffusion, respectively. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)-
dc.languageengen_HK
dc.publisherJohn Wiley & Sons, Inc.-
dc.relation.ispartofPhysica Status Solidi (C)en_HK
dc.titleAnisotropic Ambipolar Diffusion of Carriers in InGaN/GaN Quantum Wellsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailWang, Y: wangyj@hkusua.hku.hken_HK
dc.identifier.emailXu, SJ: sjxu@hkucc.hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/pssc.200565244-
dc.identifier.scopuseid_2-s2.0-33746341802-
dc.identifier.hkuros149469en_HK
dc.identifier.hkuros116259-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33746341802&selection=ref&src=s&origin=recordpage-
dc.identifier.issnl1610-1634-

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