File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Fano resonance in phonon-assisted photoluminescence spectra of wide gap polar semiconductors

TitleFano resonance in phonon-assisted photoluminescence spectra of wide gap polar semiconductors
Authors
KeywordsExciton-phonon interactions
Fano resonance
Photoluminescence
Wide gap polar semiconductors
ZnO
Issue Date2006
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
20th Congress of the International Commission for Optics, v. 6029, p. 0600-08 How to Cite?
AbstractWe report a photoluminescence observation of robust excitonic polarons due to strong coupling of exciton and longitudinal optical (LO) phonon as well as Fano-type interference in high quality ZnO crystal. At low enough temperatures, the strong coupling of excitons and LO phonons leads to not only traditional Stokes lines (SLs) but also up to second-order anti-Stokes lines (ASLs) besides the zero-phonon line (ZPL). The SLs and ASLs are found to be not mirror symmetric with respect to the ZPL, strongly suggesting that they are from different coupling states of exciton and phonons. It is more interesting that a new group of peaks, including a ZPL and several SLs, are observed. The observations can be explained with a newly developed theory in which this group is attributed to the ground excitonic polaron state and the other group is from the excited polaron states with LO phonon components partially decaying into environal phonon modes. Besides these spectral features showing the quasiparticle properties of exciton-phonon coupling system, the first-order SL is found to exhibit characteristic Fano lineshape, caused by quantum interference between the LO components of excitonic polarons and the environal phonons. These findings lead to a new insight into fundamental effects of exciton-phonon interaction.
Persistent Identifierhttp://hdl.handle.net/10722/109762
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_HK
dc.contributor.authorXiong, SJen_HK
dc.contributor.authorShi, SLen_HK
dc.contributor.authorJin, KJen_HK
dc.date.accessioned2010-09-26T01:36:11Z-
dc.date.available2010-09-26T01:36:11Z-
dc.date.issued2006en_HK
dc.identifier.citation20th Congress of the International Commission for Optics, v. 6029, p. 0600-08en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/109762-
dc.description.abstractWe report a photoluminescence observation of robust excitonic polarons due to strong coupling of exciton and longitudinal optical (LO) phonon as well as Fano-type interference in high quality ZnO crystal. At low enough temperatures, the strong coupling of excitons and LO phonons leads to not only traditional Stokes lines (SLs) but also up to second-order anti-Stokes lines (ASLs) besides the zero-phonon line (ZPL). The SLs and ASLs are found to be not mirror symmetric with respect to the ZPL, strongly suggesting that they are from different coupling states of exciton and phonons. It is more interesting that a new group of peaks, including a ZPL and several SLs, are observed. The observations can be explained with a newly developed theory in which this group is attributed to the ground excitonic polaron state and the other group is from the excited polaron states with LO phonon components partially decaying into environal phonon modes. Besides these spectral features showing the quasiparticle properties of exciton-phonon coupling system, the first-order SL is found to exhibit characteristic Fano lineshape, caused by quantum interference between the LO components of excitonic polarons and the environal phonons. These findings lead to a new insight into fundamental effects of exciton-phonon interaction.en_HK
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_HK
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_HK
dc.subjectExciton-phonon interactionsen_HK
dc.subjectFano resonanceen_HK
dc.subjectPhotoluminescenceen_HK
dc.subjectWide gap polar semiconductorsen_HK
dc.subjectZnOen_HK
dc.titleFano resonance in phonon-assisted photoluminescence spectra of wide gap polar semiconductorsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1117/12.667659en_HK
dc.identifier.scopuseid_2-s2.0-33645242180en_HK
dc.identifier.hkuros110108en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33645242180&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume6029en_HK
dc.identifier.spage0600en_HK
dc.identifier.epage08en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridXiong, SJ=7202791585en_HK
dc.identifier.scopusauthoridShi, SL=9532439000en_HK
dc.identifier.scopusauthoridJin, KJ=7102766964en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats