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Article: Positron mobility in semi-insulating 4H-SiC

TitlePositron mobility in semi-insulating 4H-SiC
Authors
Keywords4H-Silicon Carbide
Field Assisted Moderator
Positron Mobility
Semi-Insulating
Issue Date1997
PublisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.net
Citation
Materials Science Forum, 1997, v. 255-257, p. 260-262 How to Cite?
AbstractRecently, as a result of the observation of positron re-emission from crystalline 6H-SiC, it has been suggested that SiC may be a promising material for a field assisted positron moderator [1]. In this paper an attempt is made to more deeply analyze this potential application of SiC, by presenting data on the low field positron electric field drift in semi-insulating 4H-SiC as obtained using the Doppler shifted annihilation radiation technique. A low positron mobility value 3.5±3.0cm 2V -1 s -1 is found, which must be compared with values in the range 5-30cm 2V -1 s -1 obtained from positron diffusion length data. While these ranges are not incompatible, the higher values obtained from diffusion length data may indicate incomplete positron thermalization. An alternative possibility is that screening by micropipes or other defects could somehow be lowering the electric field seen by positrons in the mobility experiment.
Persistent Identifierhttp://hdl.handle.net/10722/109749
ISSN
2005 Impact Factor: 0.399
References

 

DC FieldValueLanguage
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorCheung, SHen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorHu, YFen_HK
dc.contributor.authorBrauer, Gen_HK
dc.date.accessioned2010-09-26T01:35:37Z-
dc.date.available2010-09-26T01:35:37Z-
dc.date.issued1997en_HK
dc.identifier.citationMaterials Science Forum, 1997, v. 255-257, p. 260-262en_HK
dc.identifier.issn0255-5476en_HK
dc.identifier.urihttp://hdl.handle.net/10722/109749-
dc.description.abstractRecently, as a result of the observation of positron re-emission from crystalline 6H-SiC, it has been suggested that SiC may be a promising material for a field assisted positron moderator [1]. In this paper an attempt is made to more deeply analyze this potential application of SiC, by presenting data on the low field positron electric field drift in semi-insulating 4H-SiC as obtained using the Doppler shifted annihilation radiation technique. A low positron mobility value 3.5±3.0cm 2V -1 s -1 is found, which must be compared with values in the range 5-30cm 2V -1 s -1 obtained from positron diffusion length data. While these ranges are not incompatible, the higher values obtained from diffusion length data may indicate incomplete positron thermalization. An alternative possibility is that screening by micropipes or other defects could somehow be lowering the electric field seen by positrons in the mobility experiment.en_HK
dc.languageengen_HK
dc.publisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.neten_HK
dc.relation.ispartofMaterials Science Forumen_HK
dc.rightsMaterials Science Forum. Copyright © Trans Tech Publications Ltd.en_HK
dc.subject4H-Silicon Carbideen_HK
dc.subjectField Assisted Moderatoren_HK
dc.subjectPositron Mobilityen_HK
dc.subjectSemi-Insulatingen_HK
dc.titlePositron mobility in semi-insulating 4H-SiCen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0255-5476&volume=255-257&spage=260&epage=262&date=1997&atitle=Positron+Mobility+in+Semi-Insulating+4H-SiCen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailCheung, SH: singhang@hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityCheung, SH=rp00590en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-5244302776en_HK
dc.identifier.hkuros29699en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-5244302776&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume255-257en_HK
dc.identifier.spage260en_HK
dc.identifier.epage262en_HK
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridCheung, SH=7202473508en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridHu, YF=7407119615en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK

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