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Conference Paper: Organic quantum well light emitting diodes

TitleOrganic quantum well light emitting diodes
Authors
KeywordsOLEDs
Issue Date2006
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings of SPIE, v. 6038, p. 60381M: 1-10 How to Cite?
Abstract
This work reports on simulation and experimental investigation into the charge transport and electroluminescence in a quantum well (QW) organic light emitting diode (OLED) consisting of a N,N′-di(naphthalene-1-yl)-N, N′-diphenylbenzidine (NPB) as a hole transport layer, tris (8-hydroxyquinoline) aluminum (Alq3) as a potential barrier and electron transporting layer, and rubrene as potential well layer. Indium tin oxide was used as an anode, while LiF/Al was employed as a cathode. The carrier transport was simulated using one-dimensional time-independent drift-diffusion model. The influence of the well width, barrier width, and the number of QWs on the carrier distribution, recombination rate, and device performance was investigated. Finally, the device structures which yielded most promising simulation results were fabricated and characterized. The comparison between the experimental and theoretical results is discussed.
Persistent Identifierhttp://hdl.handle.net/10722/109733
ISSN
2013 SCImago Journal Rankings: 0.203
References

 

Author Affiliations
  1. University of Queensland
  2. The University of Hong Kong
DC FieldValueLanguage
dc.contributor.authorChan, Jen_HK
dc.contributor.authorLu, AWen_HK
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorRakić, ADen_HK
dc.date.accessioned2010-09-26T01:34:54Z-
dc.date.available2010-09-26T01:34:54Z-
dc.date.issued2006en_HK
dc.identifier.citationProceedings of SPIE, v. 6038, p. 60381M: 1-10en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/109733-
dc.description.abstractThis work reports on simulation and experimental investigation into the charge transport and electroluminescence in a quantum well (QW) organic light emitting diode (OLED) consisting of a N,N′-di(naphthalene-1-yl)-N, N′-diphenylbenzidine (NPB) as a hole transport layer, tris (8-hydroxyquinoline) aluminum (Alq3) as a potential barrier and electron transporting layer, and rubrene as potential well layer. Indium tin oxide was used as an anode, while LiF/Al was employed as a cathode. The carrier transport was simulated using one-dimensional time-independent drift-diffusion model. The influence of the well width, barrier width, and the number of QWs on the carrier distribution, recombination rate, and device performance was investigated. Finally, the device structures which yielded most promising simulation results were fabricated and characterized. The comparison between the experimental and theoretical results is discussed.en_HK
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_HK
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_HK
dc.subjectOLEDsen_HK
dc.titleOrganic quantum well light emitting diodesen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1117/12.638370en_HK
dc.identifier.scopuseid_2-s2.0-33645661152en_HK
dc.identifier.hkuros148812en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33645661152&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume6038en_HK
dc.identifier.spage60381en_HK
dc.identifier.epage10en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChan, J=9234340000en_HK
dc.identifier.scopusauthoridLu, AW=15035693100en_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridRakić, AD=35618124100en_HK

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