Conference Paper: Organic quantum well light emitting diodes

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TitleOrganic quantum well light emitting diodes
AuthorsChan, J1
Lu, AW1
Ng, AMC2
Djurišić, AB2
Rakić, AD1
KeywordsOLEDs
Issue Date2006
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
CitationProceedings of SPIE, v. 6038, p. 60381M: 1-10 [How to Cite?]
DOI: http://dx.doi.org/10.1117/12.638370
AbstractThis work reports on simulation and experimental investigation into the charge transport and electroluminescence in a quantum well (QW) organic light emitting diode (OLED) consisting of a N,N′-di(naphthalene-1-yl)-N, N′-diphenylbenzidine (NPB) as a hole transport layer, tris (8-hydroxyquinoline) aluminum (Alq3) as a potential barrier and electron transporting layer, and rubrene as potential well layer. Indium tin oxide was used as an anode, while LiF/Al was employed as a cathode. The carrier transport was simulated using one-dimensional time-independent drift-diffusion model. The influence of the well width, barrier width, and the number of QWs on the carrier distribution, recombination rate, and device performance was investigated. Finally, the device structures which yielded most promising simulation results were fabricated and characterized. The comparison between the experimental and theoretical results is discussed.
ISSN0277-786X
2011 SCImago Journal Rankings: 0.046
DOIhttp://dx.doi.org/10.1117/12.638370
ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorChan, J
dc.contributor.authorLu, AW
dc.contributor.authorNg, AMC
dc.contributor.authorDjurišić, AB
dc.contributor.authorRakić, AD
dc.date.accessioned2010-09-26T01:34:54Z
dc.date.available2010-09-26T01:34:54Z
dc.date.issued2006
dc.description.abstractThis work reports on simulation and experimental investigation into the charge transport and electroluminescence in a quantum well (QW) organic light emitting diode (OLED) consisting of a N,N′-di(naphthalene-1-yl)-N, N′-diphenylbenzidine (NPB) as a hole transport layer, tris (8-hydroxyquinoline) aluminum (Alq3) as a potential barrier and electron transporting layer, and rubrene as potential well layer. Indium tin oxide was used as an anode, while LiF/Al was employed as a cathode. The carrier transport was simulated using one-dimensional time-independent drift-diffusion model. The influence of the well width, barrier width, and the number of QWs on the carrier distribution, recombination rate, and device performance was investigated. Finally, the device structures which yielded most promising simulation results were fabricated and characterized. The comparison between the experimental and theoretical results is discussed.
dc.description.natureLink_to_subscribed_fulltext
dc.identifier.citationProceedings of SPIE, v. 6038, p. 60381M: 1-10 [How to Cite?]
DOI: http://dx.doi.org/10.1117/12.638370
dc.identifier.doihttp://dx.doi.org/10.1117/12.638370
dc.identifier.epage10
dc.identifier.hkuros148812
dc.identifier.issn0277-786X
2011 SCImago Journal Rankings: 0.046
dc.identifier.scopuseid_2-s2.0-33645661152
dc.identifier.spage60381
dc.identifier.urihttp://hdl.handle.net/10722/109733
dc.identifier.volume6038
dc.languageeng
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
dc.publisher.placeUnited States
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineering
dc.relation.referencesReferences in Scopus
dc.subjectOLEDs
dc.titleOrganic quantum well light emitting diodes
dc.typeConference_Paper
Author Affiliations
  1. University of Queensland
  2. The University of Hong Kong