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Conference Paper: Electrical characterizations of deep levels in N+-implanted ZnO single crystal

TitleElectrical characterizations of deep levels in N+-implanted ZnO single crystal
Authors
Gu, QLing, FCCBrauer, GAnwand, WSkorupa, W
Issue Date2007
PublisherMaterials Research Society.
Citation
International Conference on Materials for Advanced Technologies (ICMAT 2007), Singapore, 1-6 July 2007, Abstract no. D-7-PO121 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/109727

 

DC FieldValueLanguage
dc.contributor.authorGu, Qen_HK
dc.contributor.authorLing, FCCen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.date.accessioned2010-09-26T01:34:39Z-
dc.date.available2010-09-26T01:34:39Z-
dc.date.issued2007en_HK
dc.identifier.citationInternational Conference on Materials for Advanced Technologies (ICMAT 2007), Singapore, 1-6 July 2007, Abstract no. D-7-PO121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/109727-
dc.languageengen_HK
dc.publisherMaterials Research Society.en_HK
dc.relation.ispartofInternational Conference on Materials for Advanced Technologies, ICMAT 2007en_HK
dc.rightsInternational Conference on Materials for Advanced Technologies 2007. Copyright © Materials Research Society.en_HK
dc.titleElectrical characterizations of deep levels in N+-implanted ZnO single crystalen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityLing, FCC=rp00747en_HK
dc.identifier.hkuros131682en_HK

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