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| HKU 705812P | New Optical Properties of InGaN/GaN multiple-quantum-wells nanopillars prepared with top-down method | 775000 | 2012 |
| HKU 7056/06P | Multi-photon-excited photoluminescence and dynamic processes of photogenerated carriers in high-quality zinc oxide bulk crystals and nanostructures | 538460 | 2006 |
| HKU 7036/03P | Comprehensive spectroscopy investigations of blue and green InGaN/GaN light-emitting diode structures with multi-quantum-wells | 380000 | 2003 |
| N_CityU 728/00 | Thin film synthesis and device processing of blue-light laser and LED materials by MBE and MOCVD | 156413 | 2000 |
| HKU 7049/04P | Optical Properties and Electronic Structures of InGaAs/GaAs Self-Assembled Quantum Dots with High Sheet Density | 455800 | 2004 |
| 11374247 | Comprehensive optical study of fundamental optoelectronic processes in high efficiency GaInP/GaAs double-junction tandem solar cells | 1004800 | 2013 |
| 12074324 | Influence of below-bandgap states and electric fields induced by key impurities on optical properties of GaN | 766160 | 2020 |
| JCYJ20180508163404043 | 基20180028 超寬禁帶金剛石的基礎光學特性及光電子器件應用研究 | 3768000 | 2018 |