Fabrication and characterization of GaN-based quantum dots by selective growth in nanoscale window regions patterned by atomic force microscopy assisted anodization of Si3N4 thin films
Grant Data
Project Title
Fabrication and characterization of GaN-based quantum dots by selective growth in nanoscale window regions patterned by atomic force microscopy assisted anodization of Si3N4 thin films
Principal Investigator
Professor Xie, Mao Hai
(Co-Investigator (Co-I) (for projects led by other university))
Co-Investigator(s)
Professor Djurisic Aleksandra
(Co-Investigator)
Professor Shi San Qiang
(Co-Investigator)
Professor Xu Shijie
(Co-Investigator)
Duration
24
Start Date
2003-09-01
Amount
25000
Conference Title
Fabrication and characterization of GaN-based quantum dots by selective growth in nanoscale window regions patterned by atomic force microscopy assisted anodization of Si3N4 thin films
Presentation Title
Keywords
quantum
Discipline
Physics
HKU Project Code
PolyU 5236/03E
Grant Type
General Research Fund (GRF)
Funding Year
2003
Status
Completed