Epitaxial InGaN on Si: n-InGaN/ p-Si hetero-junction for potential photovoltaic applications


Grant Data
Project Title
Epitaxial InGaN on Si: n-InGaN/ p-Si hetero-junction for potential photovoltaic applications
Principal Investigator
Dr Xie, Mao Hai   (Principal investigator)
Duration
36
Start Date
2008-09-01
Completion Date
2011-08-31
Amount
343700
Conference Title
Presentation Title
Keywords
InGaN on Si, MBE, hetero-junction, solar cell
Discipline
Materials Sciences,Physics
Panel
Physical Sciences (P)
Sponsor
RGC General Research Fund (GRF)
HKU Project Code
HKU 704808P
Grant Type
General Research Fund (GRF)
Funding Year
2008/2009
Status
Completed