Showing results 1 to 2 of 2
Title | Author(s) | Issue Date | Views | |
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Dislocation core structures in Si-doped GaN Journal:Applied Physics Letters | 2015 | 8 | ||
Structure and strain relaxation effects of defects in In<inf>x</inf>Ga<inf>1-x</inf>N epilayers Journal:Journal of Applied Physics | 2014 | 4 |