Showing results 1 to 4 of 4
Title | Author(s) | Issue Date | |
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Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS<inf>2</inf> Channel Directly Grown on SiO<inf>x</inf>/Si Substrates Using Area-Selective CVD Technology Journal:IEEE Transactions on Electron Devices | 2019 | ||
Energy-Efficient Monolithic 3-D SRAM Cell with BEOL MoS<inf>2</inf>FETs for SoC Scaling Journal:IEEE Transactions on Electron Devices | 2020 | ||
First demonstration of 40-nm channel length top-gate WS<inf>2</inf> pFET using channel area-selective CVD growth directly on SiO<inf>x</inf>/Si substrate Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2019 | ||
Monolithic Heterogeneous Integration of BEOL Power Gating Transistors of Carbon Nanotube Networks with FEOL Si Ring Oscillator Circuits Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2019 |