Showing results 2 to 3 of 3
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Title | Author(s) | Issue Date | Views | |
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Highly uniform, self-compliance, and forming-free ALD HfO<inf>2</inf>-based RRAM with Ge doping Journal:IEEE Transactions on Electron Devices | 2012 | 12 | ||
Mechanism of different switching directions in graphene oxide based RRAM Journal:Journal of the Electrochemical Society | 2012 | 10 |