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Conference Paper: Defects characterization in ZnO Schottky contact and homogeneous p-n junction

TitleDefects characterization in ZnO Schottky contact and homogeneous p-n junction
Authors
Ling, FCCGu, QZhu, CHsu, YFDjurisic, ABrauer, GAnwand, WSkorupa, W
Issue Date2008
PublisherIEEE.
Citation
The 2nd IEEE Nanotechnology Materials and Devices Conference, Kyoto, Japan, 20-22 October 2008. In Conference Proceedings, 2008, p. 113, TuB I-4 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/63090

 

DC FieldValueLanguage
dc.contributor.authorLing, FCCen_HK
dc.contributor.authorGu, Qen_HK
dc.contributor.authorZhu, Cen_HK
dc.contributor.authorHsu, YFen_HK
dc.contributor.authorDjurisic, Aen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.date.accessioned2010-07-13T04:15:48Z-
dc.date.available2010-07-13T04:15:48Z-
dc.date.issued2008en_HK
dc.identifier.citationThe 2nd IEEE Nanotechnology Materials and Devices Conference, Kyoto, Japan, 20-22 October 2008. In Conference Proceedings, 2008, p. 113, TuB I-4en_HK
dc.identifier.urihttp://hdl.handle.net/10722/63090-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Nanotechnology Materials and Devices Conference-
dc.rights©2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.titleDefects characterization in ZnO Schottky contact and homogeneous p-n junctionen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hken_HK
dc.identifier.emailDjurisic, A: dalek@hkusua.hku.hken_HK
dc.identifier.authorityLing, FCC=rp00747en_HK
dc.identifier.authorityDjurisic, A=rp00690en_HK
dc.identifier.hkuros153988en_HK

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