InGaN quantum nanodisks in nanopillars fabricated by dry etching of InGaN/GaN MQWs

Abstract

While quantum heterostructures are typically achieved via growth, here in this paper we would like to demonstrate InGaN quantum nanodisks in nanopillars fabricated by dry etching of InGaN/GaN MQWs. The fabricated quantum nanodisks of sub-30 nm dimension are investigated using micro-photoluminescence measurements and time-resolved photoluminescence studies. Changes in quantum confinement have been successfully demonstrated by microphotoluminescence studies with a reduction of the PL bandwidth of over 54% after fabrication of the quantum nanodisks. The quantum confinement effect of the nanodisk is further verified using TRPL measurement, which demonstrated a reduction of over 80% of TRPL lifetime. The reduction in lifetime implies an increase in radiative recombination rate and thus better quantum efficiencies.