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Article: Chip-scale GaN integration

TitleChip-scale GaN integration
Authors
Li, KHFu, WYChoi, HW
KeywordsGaN
Monolithic integration
Heterogeneous integration
Micro-LED
III-V semiconductor
Issue Date2020
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/pqe
Citation
Progress in Quantum Electronics, 2020, v. 70, article no. 100247 How to Cite?
DOI: http://dx.doi.org/10.1016/j.pquantelec.2020.100247
AbstractBlue LEDs and HEMTs based on III-Nitride have been flourishing commercially across the globe, thanks largely to breakthroughs in the material quality of the wide-bandgap compound semiconductor back in the 1990s. The realizations of white-light LEDs, blu-ray systems, and lately efficient compact chargers have drastically changed the way we live and have contributed tremendously to global energy saving efforts. The maturity and diversity of modern discrete GaN-based devices open up opportunities for an integrated GaN platform with extended functionalities and applications. In this review paper, we present an overview of the monolithic and heterogeneous integration of GaN devices and components. Various methods for the integration of electronic, optoelectronic, and optical components based on GaN are discussed.
Persistent Identifierhttp://hdl.handle.net/10722/286215
ISSN
0079-6727
2021 Impact Factor: 10.333
2020 SCImago Journal Rankings: 2.616
ISI Accession Number ID
WOS:000525924600001

 

DC FieldValueLanguage
dc.contributor.authorLi, KH-
dc.contributor.authorFu, WY-
dc.contributor.authorChoi, HW-
dc.date.accessioned2020-08-31T07:00:46Z-
dc.date.available2020-08-31T07:00:46Z-
dc.date.issued2020-
dc.identifier.citationProgress in Quantum Electronics, 2020, v. 70, article no. 100247-
dc.identifier.issn0079-6727-
dc.identifier.urihttp://hdl.handle.net/10722/286215-
dc.description.abstractBlue LEDs and HEMTs based on III-Nitride have been flourishing commercially across the globe, thanks largely to breakthroughs in the material quality of the wide-bandgap compound semiconductor back in the 1990s. The realizations of white-light LEDs, blu-ray systems, and lately efficient compact chargers have drastically changed the way we live and have contributed tremendously to global energy saving efforts. The maturity and diversity of modern discrete GaN-based devices open up opportunities for an integrated GaN platform with extended functionalities and applications. In this review paper, we present an overview of the monolithic and heterogeneous integration of GaN devices and components. Various methods for the integration of electronic, optoelectronic, and optical components based on GaN are discussed.-
dc.languageeng-
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/pqe-
dc.relation.ispartofProgress in Quantum Electronics-
dc.subjectGaN-
dc.subjectMonolithic integration-
dc.subjectHeterogeneous integration-
dc.subjectMicro-LED-
dc.subjectIII-V semiconductor-
dc.titleChip-scale GaN integration-
dc.typeArticle-
dc.identifier.emailFu, WY: wyfu@hku.hk-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.authorityLi, KH=rp02142-
dc.identifier.authorityChoi, HW=rp00108-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.pquantelec.2020.100247-
dc.identifier.scopuseid_2-s2.0-85080984284-
dc.identifier.hkuros313746-
dc.identifier.volume70-
dc.identifier.spagearticle no. 100247-
dc.identifier.epagearticle no. 100247-
dc.identifier.isiWOS:000525924600001-
dc.publisher.placeUnited Kingdom-
dc.identifier.issnl0079-6727-

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