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Article: Modelling the optical constants of GaAs: excitonic effects at E1, E1 + Δ1 critical points
Title | Modelling the optical constants of GaAs: excitonic effects at E1, E1 + Δ1 critical points |
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Authors | |
Issue Date | 1999 |
Publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst |
Citation | Semiconductor Science And Technology, 1999, v. 14 n. 11, p. 958-960 How to Cite? |
Abstract | Calculation of the optical constants of GaAs is presented. In this work we do not take into account excitonic effects at E1 and E1 + Δ1 critical points. In such a manner, fewer adjustable model parameters are required and the term with dubious physical interpretation describing excitons at E1 and E1 + Δ1 is left out. Reasons for exclusion of this term are discussed in detail. In spite of the fewer terms describing the contributions of different transitions to the dielectric function, we obtain excellent agreement with experimental data over the entire 0.125-6 eV range, with relative rms error for the refractive index equal to 2.6%. |
Persistent Identifier | http://hdl.handle.net/10722/174785 |
ISSN | 2023 Impact Factor: 1.9 2023 SCImago Journal Rankings: 0.411 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Djurišić, AB | en_US |
dc.contributor.author | Li, EH | en_US |
dc.date.accessioned | 2012-11-26T08:47:25Z | - |
dc.date.available | 2012-11-26T08:47:25Z | - |
dc.date.issued | 1999 | en_US |
dc.identifier.citation | Semiconductor Science And Technology, 1999, v. 14 n. 11, p. 958-960 | en_US |
dc.identifier.issn | 0268-1242 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/174785 | - |
dc.description.abstract | Calculation of the optical constants of GaAs is presented. In this work we do not take into account excitonic effects at E1 and E1 + Δ1 critical points. In such a manner, fewer adjustable model parameters are required and the term with dubious physical interpretation describing excitons at E1 and E1 + Δ1 is left out. Reasons for exclusion of this term are discussed in detail. In spite of the fewer terms describing the contributions of different transitions to the dielectric function, we obtain excellent agreement with experimental data over the entire 0.125-6 eV range, with relative rms error for the refractive index equal to 2.6%. | en_US |
dc.language | eng | en_US |
dc.publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst | en_US |
dc.relation.ispartof | Semiconductor Science and Technology | en_US |
dc.title | Modelling the optical constants of GaAs: excitonic effects at E1, E1 + Δ1 critical points | en_US |
dc.type | Article | en_US |
dc.identifier.email | Djurišić, AB: dalek@hku.hk | en_US |
dc.identifier.authority | Djurišić, AB=rp00690 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1088/0268-1242/14/11/302 | en_US |
dc.identifier.scopus | eid_2-s2.0-0033338357 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0033338357&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 14 | en_US |
dc.identifier.issue | 11 | en_US |
dc.identifier.spage | 958 | en_US |
dc.identifier.epage | 960 | en_US |
dc.identifier.isi | WOS:000083630700006 | - |
dc.publisher.place | United Kingdom | en_US |
dc.identifier.scopusauthorid | Djurišić, AB=7004904830 | en_US |
dc.identifier.scopusauthorid | Li, EH=7201410087 | en_US |
dc.identifier.issnl | 0268-1242 | - |