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Article: Current Saturation Mechanisms in Junction Field-Effect Transistors
Title | Current Saturation Mechanisms in Junction Field-Effect Transistors |
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Authors | |
Issue Date | 1972 |
Citation | Advances In Electronics And Electron Physics, 1972, v. 31 C, p. 247-265 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/155584 |
ISSN | 2019 SCImago Journal Rankings: 0.125 |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, ES | en_US |
dc.date.accessioned | 2012-08-08T08:34:12Z | - |
dc.date.available | 2012-08-08T08:34:12Z | - |
dc.date.issued | 1972 | en_US |
dc.identifier.citation | Advances In Electronics And Electron Physics, 1972, v. 31 C, p. 247-265 | en_US |
dc.identifier.issn | 0065-2539 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/155584 | - |
dc.language | eng | en_US |
dc.relation.ispartof | Advances in Electronics and Electron Physics | en_US |
dc.title | Current Saturation Mechanisms in Junction Field-Effect Transistors | en_US |
dc.type | Article | en_US |
dc.identifier.email | Yang, ES:esyang@hkueee.hku.hk | en_US |
dc.identifier.authority | Yang, ES=rp00199 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1016/S0065-2539(08)60225-5 | en_US |
dc.identifier.scopus | eid_2-s2.0-77956977837 | en_US |
dc.identifier.volume | 31 | en_US |
dc.identifier.issue | C | en_US |
dc.identifier.spage | 247 | en_US |
dc.identifier.epage | 265 | en_US |
dc.identifier.scopusauthorid | Yang, ES=7202021229 | en_US |
dc.identifier.issnl | 0065-2539 | - |