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	Title	Author(s)	Issue Date
	Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature Journal:Advanced Electronic Materials	Lan, Jun Li, Zhixiong Chen, Zhenjie Zhu, Quanzhou Wang, Wenhui Zaheer, Muhammad Lu, Jiqing Liang, Jinxuan Shen, Mei Chen, Peng Chen, Kai Zhang, Guobiao Wang, Zhongrui Zhou, Feichi Lin, Longyang Li, Yida	29-Jan-2023

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