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Title	Author(s)	Issue Date	Views
Acceptors in undoped gallium antimonide Proceeding/Conference:Materials Research Society Symposium - Proceedings	Lui, MK Ling, CC Chen, XD Cheah, KW Li, KF	2003	82
Analytical target cascading-enabled optimal configuration platform for production service systems Journal:International Journal of Computer Integrated Manufacturing	Qu, T Chen, XD Zhang, Y Yang, H Huang, GQ	2011	127
Anomalous behaviors of E1 E2 deep level defects in 6H silicon carbide Journal:Applied Physics Letters	Chen, XD Ling, CC Gong, M Fung, S Beling, CD Brauer, G Anwand, W Skorupa, W	2005	79
Au/n-ZnO rectifying contact fabricated with hydrogen peroxide pretreatment Journal:Journal of Applied Physics	Gu, QL Cheung, CK Ling, CC Ng, AMC Djurišić, AB Lu, LW Chen, XD Fung, S Beling, CD Ong, HC	2008	136
Beryllium implantation induced deep level defects in p-type 6h-silicon carbide Journal:Journal of Applied Physics	Chen, XD Ling, CC Fung, S Beling, CD Gong, M Henkel, T Tanoue, H Kobayashi, N	2003	77
Beryllium implantation induced deep levels in 6H-silicon carbide Journal:Physica B: Condensed Matter	Chen, XD Fung, S Beling, CD Gong, M Henkel, T Tanoue, H Kobayashi, N	2001	94
Carrier mobility distribution in annealed undoped LEC InP material Journal:Journal of Crystal Growth	Zhao, YW Fung, S Beling, CD Sun, NF Chen, XD Sun, TN Zhang, J Bi, K Wu, X	2000	72
Compensation defects in annealed undoped liquid encapsulated Czochralski InP Journal:Journal of Applied Physics	Fung, S Zhao, YW Xu, XL Chen, XD Sun, NF Sun, TN Zhang, RG Liu, SL Yang, GY Guo, XB Sun, YZ Yan, RY Hua, QH	1999	87
Compensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InP Journal:Applied Physics Letters	Fung, S Zhao, YW Beling, CD Xu, XL Gong, M Sun, NF Sun, TN Chen, XD Zhang, RG Liu, SL Yang, GY Qian, JJ Sun, MF Liu, XL	1998	90
Current transport property of n-GaN/n-6H-SiC heterojunction: Influence of interface states Journal:Applied Physics Letters	Huang, Y Chen, XD Fung, S Beling, CD Ling, CC Dai, XQ Xie, MH	2005	91
Current transport studies of ZnO/p-Si heterostructures grown by plasma immersion ion implantation and deposition Journal:Applied Physics Letters	Chen, XD Ling, CC Fung, S Beling, CD Mei, YF Fu, RKY Siu, GG Chu, PK	2006	62
Deep level defect in Si-implanted GaN n +-p junction Journal:Applied Physics Letters	Chen, XD Huang, Y Fung, S Beling, CD Ling, CC Sheu, JK Lee, ML Chi, GC Chang, SJ	2003	67
Deep level defects E1/E2 in n-type 6H silicon carbide induced by electron radiation and He-implantation Proceeding/Conference:AIP Conference Proceedings	Ling, CC Chen, XD Fung, S Beling, CD Brauer, G Anwand, W Skorupa, W Gong, M	2005	100
Deep level defects in 6H silicon carbide Journal:物理	Ling, CC Chen, XD Fung, SHY Beling, CD Gong, M Ge, WK Wang, JN Brauer, G Anwand, W Skorupa, W	2004	65
Deep level defects in he-implanted n-6H-SiC studied by deep level transient spectroscopy Proceeding/Conference:Materials Research Society Symposium Proceedings	Chen, XD Ling, CC Fung, S Beling, CD Wu, HS Brauer, G Anwand, W Skorupa, W	2004	61
Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC Journal:Journal of Applied Physics	Chen, XD Fung, S Ling, CC Beling, CD Gong, M	2003	88
A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC Journal:Journal of Applied Physics	Chen, XD Fung, S Beling, CD Gong, M Henkel, T Tanoue, H Kobayashi, N	2000	75
Deep level transient spectroscopy study of particle irradiation induced defects in n-6H-SiC Proceeding/Conference:Bulletin of the American Physical Society	Chen, XD Gong, M Fung, SHY Beling, CD Ling, FCC	2004	54
Deep-level defects in n-type 6H silicon carbide induced by He implantation Journal:Journal of Applied Physics	Ling, CC Chen, XD Brauer, G Anwand, W Skorupa, W Wang, HY Weng, HM	2005	96
The depth-profiled carrier concentration and scattering mechanism in undoped GaN film grown on sapphire Journal:Journal of Applied Physics	Huang, Y Chen, XD Fung, S Beling, CD Ling, CC Wei, ZF Xu, SJ Zhi, CY	2004	112

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