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| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V<inf>th</inf> matching and CMOS-compatible 3DFETs Proceeding/Conference:International Electron Devices Meeting (IEDM) | 2015 | |||
TMD FinFET with 4 nm thin body and back gate control for future low power technology Proceeding/Conference:International Electron Devices Meeting (IEDM) | 2015 |