Showing results 1 to 2 of 2
| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
Effects of low-energy back surface gettering on the properties of 1/f noise in n-channel nitrided MOSFETs Proceeding/Conference:IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE | 1997 | 113 | ||
Effects of low-energy backsurface gettering on the properties of low-frequency excess noise in NH3 and N2O nitrided MOSFETs Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting | 1997 |