Browsing by Author Sin, JKO

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TitleAuthor(s)Issue DateViews
 
Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation
Journal:Microelectronics Reliability
Or, DCTLai, PTSin, JKOKwok, PCKXu, JP
2003
187
 
A Fast Switching Insulated-Gate P-I-N Diode Controlled Thyristor Structure
Proceeding/Conference:I E E E International Conference on Semiconductor Electronics Proceedings
Jun, CSin, JKOPoon, MCNg, WTLai, PT
1996
54
 
Fluorinated SrTiO3 as charge-trapping layer for nonvolatile memory applications
Journal:IEEE Transactions on Electron Devices
Huang, XDSin, JKOLai, PT
2011
171
 
Ga2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applications
Journal:IEEE Transactions on Nanotechnology
Huang, XSin, JKOLai, PT
2013
58
 
High-temperature thermal sensor based on ultra-thin silicon film for ultra-low-power applications
Journal:Solid-State Electronics
Li, BWu, ZHLai, PTSin, JKOLiu, BYZheng, XR
2003
187
 
Improved Charge-Trapping Characteristics of BaTiO3 by Zr Doping for Nonvolatile Memory Applications
Journal:IEEE Electron Device Letters
Huang, XSin, JKOLai, PT
2013
27
 
Improved Charge-Trapping Characteristics of ZrO2 by Al Doping for Nonvolatile Memory Applications
Journal:IEEE Transactions on Device and Materials Reliability
HUANG, XSHI, RSin, JKOLai, PT
2016
45
 
Improved reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation
Journal:Solid-State Electronics
Or, DCTLai, PTSin, JKOXu, JP
2003
149
 
Latch-up characteristics of a trench-gate conductivity modulated power transistor
Proceeding/Conference:IEEE Region International Conference on Microelectronics and VLSI Proceedings
Jun, CSin, JKONg, WTLai, PT
1995
 
LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications
Journal:Applied Physics A: Materials Science and Processing
Huang, XDLai, PTSin, JKO
2012
229
 
Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications
Journal:Microelectronics Reliability
SHI, RHuang, XDSin, JKOLai, PT
2016
62
 
Nb-doped Gd2O3 as charge-trapping layer for nonvolatile memory applications
Journal:Applied Physics Letters
SHI, RHUANG, XSin, JKOLai, PT
2015
50
 
Nb-Doped La2O3 as Charge-Trapping Layer for Nonvolatile Memory Applications
Journal:IEEE Transactions on Device and Materials Reliability
Shi, RPHuang, XDLeung, CHSin, JKOLai, PT
2015
35
 
A new high-temperature thermal sensor based on large-grain polysilicon on insulator
Journal:Sensors and Actuators, A: Physical
Wu, ZHLai, PTSin, JKO
2006
211
 
A new lateral trench-gate conductivity modulated power transistor
Journal:IEEE Transactions on Electron Devices
Cai, JSin, JKOMok, PKTNg, WTLai, PT
1999
 
Nitrided La2O3 as charge-trapping layer for nonvolatile memory applications
Journal:IEEE Transactions on Device and Materials Reliability
Huang, XDSin, JKOLai, PT
2012
135
 
Novel silicon-embedded coreless transformer for on-chip isolated signal transfer
Journal:IEEE Magnetics Letters
Wu, RSin, JKOHui, SY
2011
115
 
Optimization of plasma nitridation for reliability enhancement of low-temperature gate dielectric in MOS devices
Journal:Solid-State Electronics
Or, DCTLai, PTSin, JKO
2003
 
Optimization of silicon Spreading-Resistance Temperature sensor
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
Li, BinLai, PTChan, CLSin, JKO
2000
 
Performance of nonvolatile memory by using band-engineered SrTiO 3/HfON stack as charge-trapping layer
Journal:Microelectronics Reliability
Huang, XDLai, PTSin, JKO
2012
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