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Title | Author(s) | Issue Date | Views | |
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High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2020 | 17 | ||
2019 |