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	Title	Author(s)	Issue Date	Views
	Characterization of optical and structural properties of Pt-Si interface by spectroscopic ellipsometry Proceeding/Conference:Proceedings of the 22nd International Conference on the Physics of Semiconductors, Canada	Liu, YC Chen, TP Reddy, CV Fung, S Beling, CD	1994	87
	Deep level traps in the extended tail region of boron-implanted n-type 6H-SiC Journal:Applied Physics Letters	Gong, M Reddy, CV Beling, CD Fung, S Brauer, G Wirth, H Skorupa, W	1998	174
	DX-like properties of the EL6 defect family in GaAs Journal:Physical Review B (Condensed Matter)	Reddy, CV Luo, YL Fung, S Beling, CD	1998	162
	Inexpensive circuit for the measurement of capture cross section of deep level defects in semiconductors Journal:Review of Scientific Instruments	Reddy, CV Fung, S Beling, CD	1996	163
	Nature of the bulk defects in GaAs through high-temperature quenching studies Journal:Physical Review B (Condensed Matter)	Reddy, CV Fung, S Beling, CD	1996	110
	Positron deep level transient spectroscopy - A new application of positron annihilation to semiconductor physics Journal:Applied Surface Science	Beling, CD Fung, S Au, HL Ling, CC Reddy, CV Deng, AH Panda, BK	1997	169
	Rapid thermal annealing induced deep level defects in Te-doped GaAs Journal:Physica Status Solidi (A) Applied Research	Reddy, CV Fung, S Beling, CD	1998	165
	A simple and inexpensive circuit for emission and capture deep level transient spectroscopy Journal:Review of Scientific Instruments	Reddy, CV Fung, S Beling, CD	1996	112
	The slow-positron beam facility at the University of Hong Kong Proceeding/Conference:AIP Conference Proceedings 303 Slow Positron Beam Techniques for Solid and Surfaces: Fifth International Workshop	Beling, CD Fung, S Weng, HM Reddy, CV Fan, SW Shan, YY Ling, CC	1994	108
	The transformations of the EL6 deep level defect in n-GaAs: is EL6 a DX-like center? Proceeding/Conference:Materials Research Society Symposium Proceedings	Reddy, CV Fung, SHY Beling, CD	1998	128

Showing results 1 to 10 of 10