Showing results 1 to 5 of 5
| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
Rutherford backscattering analysis of GaN decomposition Journal:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 2003 | 118 | ||
Stoichiometric and structural alterations in GaN thin films during annealling Journal:Applied Physics A: Materials Science and Processing | 2003 | 154 | ||
A study of the decomposition of GaN during annealing over a wide range of temperatures Proceeding/Conference:Materials Research Society Symposium - Proceedings | 2002 | 111 | ||
A study of the material loss and other processes involved during annealing of GaN at growth temperatures Journal:Chemical Physics Letters | 2003 | 126 | ||
Surface analysis of GaN decomposition Journal:Semiconductor Science and Technology | 2002 | 146 |