Showing results 4 to 8 of 8
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| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
First demonstration of 40-nm channel length top-gate WS<inf>2</inf> pFET using channel area-selective CVD growth directly on SiO<inf>x</inf>/Si substrate Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2019 | 13 | ||
MoS<inf>2</inf> U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS<inf>2</inf> availability Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2016 | 8 | ||
| 2020 | 6 | |||
| 2019 | 5 | |||
TMD FinFET with 4 nm thin body and back gate control for future low power technology Proceeding/Conference:International Electron Devices Meeting (IEDM) | 2015 | 12 |