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	Title	Author(s)	Issue Date	Views
	A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric Journal:Microelectronic Engineering	Li, CX Wang, CD Leung, CH Lai, PT Xu, JP	2009	268
	Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) Proceedings	Lai, PT Li, CX Xu, JP Zou, X Chan, CL	2005
	Suppressed growth of unstable low-fr GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor Journal:Applied Physics Letters	Zou, X Xu, JP Li, CX Lai, PT	2007	190
	The inhibition of aldose reductase attenuates hepatic ischemia-reperfusion injury through reducing inflammatory response Journal:Annals of Surgery	Li, CX Ng, KTP Shao, Y Liu, XB Ling, CC Ma, YY Geng, W Qi, X Cheng, Q Chung, SK Lo, CM Man, K	2014	80
	The Roles of Lipocalin-2 in Small-for-Size Fatty Liver Graft Injury Journal:Annals of Surgery	Cheng, Q Ng, KTP Xu, A Li, CX Liu, XB Guo, DY Poon, RTP Fan, ST Lo, CM Man, K	2014	68
	Thermal Analysis of Liquid Crystal Phase Transition Using FTIR Spectroscopy Journal:Kao Teng Hsueh Hsiao Hua Heush Hsueh Pao/ Chemical Journal of Chinese Universities	Wu, Q Li, CX Li, XC Li, YH	2001	67
	Threshold voltage model of SiGe channel pMOSFET without Si cap layer Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC	Zou, X Li, CX Xu, JP Lai, PT Chen, WB	2006	121
	A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer Journal:Microelectronics Reliability	Zou, X Xu, JP Li, CX Lai, PT Chen, WB	2007	215
	Two-dimensional infrared correlation spectroscopy on dodecyloxy benzoic acid phase transition Journal:Spectroscopy And Spectral Analysis	Wu, Q Li, CX Li, XC Li, YH	2001	25
	Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness Journal:Thin Solid Films	Xu, JP Zou, X Lai, PT Li, CX Chan, CL	2009	200
	Wide-bandgap high- k Y2 O3 as passivating interlayer for enhancing the electrical properties and high-field reliability of n-Ge metal-oxide-semiconductor capacitors with high- k HfTiO gate dielectric Journal:Applied Physics Letters	Li, CX Lai, PT	2009	149

Showing results 50 to 60 of 60 < previous