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	Title	Author(s)	Issue Date	Views
	Epitaxial growth mode and silicon/silicon-germanium heterointerfaces Journal:Journal of Materials Science: Materials in Electronics	Fernández, JM Hart, L Zhang, XM Xie, MH Zhang, J Joyce, BA	1996	46
	Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy Journal:Journal of Crystal Growth	Zhang, J Zhang, XM Matsumura, A Marinopoulou, A Hartung, J Anwar, N Parry, G Xie, MH Mokler, SM Fernandez, JM Joyce, BA	1995	39
	Growth and doping of Si and SiGe films by hydride gas-source molecular beam epitaxy Journal:Journal of Crystal Growth	Joyce, BA Fernández, JM Xie, MH Matsumura, A Zhang, J Taylor, AG	1996	41
	Growth dynamics studied by RHEED during Si Ge epitaxy from gaseous hydrides Journal:Surface Science	Xie, MH Zhang, J Mokler, SM Fernández, J Joyce, BA	1994	26
	Growth of Si1-xGex heterostructures using gas-source molecular beam epitaxy Journal:International Journal of Optoelectronics	Ohtani, N Mokler, SM Xie, MH Zhang, J Zhang, X Joyce, BA	1994	29
	Growth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4 Journal:Journal of Crystal Growth	Mokler, SM Ohtani, N Xie, MH Zhang, X Joyce, BA	1993	46
	In situ observation of growth rate enhancement during gas source molecular beam epitaxy of Si1-xGex alloys on Si(100) surfaces Journal:Applied Physics Letters	Mokler, SM Ohtani, N Xie, MH Zhang, J Joyce, BA	1992	26
	In situ studies of epitaxial silicon growth by gas source molecular beam epitaxy Journal:Advanced Materials for Optics and Electronics	Joyce, BA Zhang, J Taylor, AG Xie, MH Fernández, JM Lees, AK	1997	36
	Missing "sheets" in the reciprocal space representation of the disordered surface with one-dimensional domain boundaries Journal:Surface Review and Letters	Tok, ES Zhang, J Kamiya, I Xie, MH Neave, JH Joyce, BA	2001	39
	New hydrogen desorption kinetics from vicinal Si(0 0 1) surfaces observed by reflectance anisotropy spectroscopy Journal:Journal of Crystal Growth	Zhang, J Lees, AK Taylor, AG Xie, MH Joyce, BA Sobiesierksi, Z Westwood, DI	1997	42
	Reflection high-energy electron diffraction intensity oscillations of germanium growth on Si(100) using gas source molecular beam epitaxy Journal:Applied Physics Letters	Xie, MH Zhang, J Mokler, SM Fernández, JM Joyce, BA	1994	55
	RHEED investigation of Ge surface segregation during gas source MBE of Si Si1 - xGex heterostructures Journal:Surface Science	Ohtani, N Mokler, SM Xie, MH Zhang, J Joyce, BA	1993	17
	Silicon/silicon-germanium multiple quantum wells grown by gas-source molecular beam epitaxy: Hydrogen coverage and interfacial abruptness Journal:Journal of Crystal Growth	Fernández, JM Hart, L Zhang, XM Xie, MH Zhang, J Joyce, BA	1996	66
	Surface segregation during molecular beam epitaxy: The site-blocking effects of surfactant atoms Journal:Surface Science	Xie, MH Zhang, J Lees, A Fernandez, JM Joyce, BA	1996	45
	Transient growth rate change during gas source molecular beam epitaxy of Si1-xGex alloys Journal:Applied Physics Letters	Ohtani, N Mokler, SM Xie, MH Zhang, J Joyce, BA	1993	52
	Two dimensional electron gases in SiGe/Si heterostructures grown by gas source molecular beam epitaxy Journal:Journal of Materials Science: Materials in Electronics	Fernández, JM Matsumura, A Zhang, XM Xie, MH Hart, L Zhang, J Joyce, BA Thornton, TJ	1995	35

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