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| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting | 1997 | 42 | ||
Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment Journal:Microelectronics Reliability | 1998 | 57 |