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Showing results 1 to 5 of 5

	Title	Author(s)	Issue Date
	Identities of the deep level defects E 1/E 2 in 6H silicon carbide Proceeding/Conference:Materials Science Forum	Ling, CC Chen, XD Gong, M Weng, HM Hang, DS Beling, CD Fung, S Lam, TW Lam, CH	2004
	Is the Ga vacancy related defect the residual acceptor of gallium antimonide? Proceeding/Conference:Proceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects	Ling, FCC Chen, X Weng, HM Hang, DS Lui, MKP Lam, CH Cheah, KW Li, KF Mui, WK Beling, CD Fung, SHY	2003
	Undoped gallium antimonide studied by positron annihilation spectroscopy Proceeding/Conference:Materials Research Society Symposium - Proceedings	Ma, SK Ling, CC Weng, HM Hang, DS	2003
	Vacancies in electron irradiated 6H silicon carbide studied by positron annihilation spectroscopy Proceeding/Conference:Materials Research Society Symposium - Proceedings	Lam, CH Ling, CC Beling, CD Fung, S Weng, HM Hang, DS	2003
	Vacancy in 6H-silicon carbide studied by slow positron beam Journal:Chinese Physics Letters	Wang, HY Weng, HM Hang, DS Zhou, XY Ye, BJ Fan, YM Han, RD Ling, CC Hui, YP	2003

Showing results 1 to 5 of 5