Browsing by Author HUANG, XD

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TitleAuthor(s)Issue DateViews
Effects of fluorine incorporation on the electrical properties of silicon MOS capacitor with La2O3 gate dielectric
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
2011
115
 
2018
35
 
2015
68
 
2018
43
 
2011
182
 
2012
60
 
2016
48
 
2015
70
 
2011
178
 
2014
47
 
2016
38
 
2011
208
 
2017
36
 
2014
15
 
LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications
Journal:Applied Physics A: Materials Science and Processing
2012
247
 
2021
46
 
2016
61
 
Nb-Doped La2O3 as Charge-Trapping Layer for Nonvolatile Memory Applications
Journal:IEEE Transactions on Device and Materials Reliability
2015
39
 
Nitrided La2O3 as charge-trapping layer for nonvolatile memory applications
Journal:IEEE Transactions on Device and Materials Reliability
2012
148
 
2011
216