Showing results 1 to 3 of 3
| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
Exposure of defects in GaN by plasma etching Journal:Applied Physics A: Materials Science and Processing | 2005 | 176 | ||
Rutherford backscattering analysis of GaN decomposition Journal:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 2003 | 118 | ||
Study of the origin of luminescence in high indium composition InGaN/GaN quantum wells Journal:Journal of Applied Physics | 2003 | 183 |