Showing results 4 to 6 of 6
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| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
MoS<inf>2</inf> U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS<inf>2</inf> availability Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2016 | |||
| 2019 | ||||
TMD FinFET with 4 nm thin body and back gate control for future low power technology Proceeding/Conference:International Electron Devices Meeting (IEDM) | 2015 |