Showing results 2 to 8 of 8
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| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate Journal:IEEE Transactions on Electron Devices | 2016 | 37 | ||
Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer Journal:Applied Physics Letters | 2016 | 56 | ||
| 2017 | 26 | |||
| 2019 | 18 | |||
Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation Journal:IEEE Transactions on Electron Devices | 2017 | 13 | ||
Interfacial and Electrical Properties of Ge MOS Capacitor by ZrLaON Passivation Layer and Fluorine Incorporation Proceeding/Conference:IOP Conference Series: Materials Science and Engineering | 2017 | 27 | ||
Moisture-absorption-free LaTaON as gate dielectric of Ge MOS devices Journal:Applied Surface Science | 2019 | 32 |