HKU ResearcherPage: Feng, SPT

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Feng, Shien Ping Tony picture
Dr Feng, Shien Ping Tony
馮憲平
  • Assistant Professor
Articles (Feng, SPT)

Results 1-13 of 13.

TitleAuthor(s)YearView Count
1Thermal percolation in stable graphite suspensionsZheng, R; Gao, J; Wang, JJ; Feng, SP; Ohtani, H; Wang, JB; Chen, G2012137
2High-performance flat-panel solar thermoelectric generators with high thermal concentrationKraemer, D; Poudel, B; Feng, HP; Caylor, JC; Yu, B; Yan, X; Ma, Y; Wang, X; Wang, D; Muto, A; McEnaney, K; Chiesa, M; Ren, Z; Chen, G2011235
3Studies on surface preparation and smoothness of nanostructured Bi 2Te 3-based alloys by electrochemical and mechanical methodsFeng, HP; Yu, B; Chen, S; Collins, K; He, C; Ren, ZF; Chen, G2011152
4Nanoparticle-enabled selective electrodepositionFeng, HP; Paudel, T; Yu, B; Chen, S; Ren, ZF; Chen, G2011153
5The simple and easy way to manufacture counter electrode for dye-sensitized solar cellsLan, JL; Wang, YY; Wan, CC; Wei, TC; Feng, HP; Peng, C; Cheng, HP; Chang, YH; Hsu, WC2010172
6Platinum nanoparticles on flexible carbon fiber paper without transparent conducting oxide glass as counter electrode for dye-sensitized solar cellsLan, JL; Feng, HP; Wei, TC; Peng, C; Cheng, HP; Chen, WH; Chang, YH; Hsu, WC; Wan, CC2010162
7Effect of impurity and illumination on copper oxidation after chemical mechanical polishingFeng, HP; Lin, JY; Wang, YY; Wan, CC2008160
8Behavior of copper removal by CMP and its correlation to deposit structure and impurity contentFeng, HP; Lin, JY; Cheng, MY; Wang, YY; Wan, CC2008155
9Void defect reduction after chemical mechanical planarization of trenches filled by direct/pulse platingLin, JY; Wan, CC; Wang, YY; Feng, HP2007144
10Impurities induced localized corrosion between copper and tantalum nitride during chemical mechanical planarizationLin, JY; Wang, YY; Wan, CC; Feng, HP; Cheng, MY2007141
11Effect of plating current density and annealing on impurities in electroplated Cu filmLiu, CW; Wang, YL; Tsai, MS; Feng, HP; Chang, SC; Hwang, GJ2005121
12Electroless Cu deposition process on TiN for ULSI interconnect fabrication via Pd/Sn colloid activationFong, HP; Wu, Y; Wang, YY; Wan, CC2003113
13Displacement reactions between metal ions and nitride barrier layer/silicon substrateWu, Y; Chen, WC; Fong, HP; Wan, CC; Wang, YY2002164

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