| | Title | Author(s) | Year | View Count | | 1 |  | Conduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure | Zhu, W; Chen, TP; Liu, Y; Fung, SHY | 2012 | 84 |
| 2 | | Energy loss of monoenergetic positrons passing through a thin carbon foil | Yang, B; Ng, CK; Ling, CC; Fung, S | 2012 | 194 |
| 3 |  | A quantitative modeling of the contributions of localized surface plasmon resonance and interband transitions to absorbance of gold nanoparticles | Zhu, S; Chen, TP; Liu, YC; Liu, Y; Fung, S | 2012 | 107 |
| 4 | | Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film | Hu, SG; Liu, Y; Chen, TP; Liu, Z; Yang, M; Yu, Q; Fung, S | 2012 | 64 |
| 5 | | Resistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperatures | Zhu, W; Chen, TP; Yang, M; Liu, Y; Fung, SHY | 2012 | 65 |
| 6 | | Flexible write-once-read-many-times memory device based on a nickel oxide thin film | Yu, Q; Liu, Y; Chen, TP; Liu, Z; Yu, YF; Lei, HW; Zhu, J; Fung, S | 2012 | 88 |
| 7 | | Thickness dependence of positron induced secondary electron emission in forward geometry from thin carbon foils | Yang, B; Cai, LH; Ng, CK; Ling, CC; Fung, S | 2011 | 896 |
| 8 | | Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films | Cen, ZH; Chen, TP; Ding, L; Liu, Z; Wong, JI; Yang, M; Goh, WP; Fung, S | 2011 | 175 |
| 9 | | Deep level transient spectroscopic study of oxygen implanted melt grown ZnO single crystal | Ye, ZR; Lu, XH; Ding, GW; Fung, S; Ling, CC; Brauer, G; Anwand, W | 2011 | 413 |
| 20910 | | Thermal and optical excitation of trapped electrons in high-density polyethylene (HDPE) studied through positron annihilation | Nahid, F; Zhang, JD; Yu, TF; Ling, CC; Fung, S; Beling, CD | 2011 | 229 |
| 20911 | | Annealing study of titanium oxide nanotube arrays | Yang, B; Ng, CK; Fung, MK; Ling, CC; Djurišić, AB; Fung, S | 2011 | 227 |
| 20912 | | Self-learning ability realized with a resistive switching device based on a Ni-rich nickel oxide thin film | Liu, Y; Chen, TP; Liu, Z; Yu, YF; Yu, Q; Li, P; Fung, S | 2011 | 129 |
| 20913 | | Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering | To, CK; Yang, B; Su, SC; Ling, CC; Beling, CD; Fung, S | 2011 | 97 |
| 20914 | | Two-terminal write-once-read-many-times memory device based on charging-controlled current modulation in Al/Al-Rich Al 2O 3/p-Si diode | Zhu, W; Chen, TP; Liu, Y; Yang, M; Fung, S | 2011 | 804 |
| 20915 | | Temperature dependence of current transport in Al/Al 2O 3 nanocomposite thin films | Liu, Y; Chen, TP; Ding, L; Yang, M; Liu, Z; Wong, JI; Fung, S | 2011 | 222 |
| 20916 | | Competition of resistive-switching mechanisms in nickel-rich nickel oxide thin films | Yu, Q; Liu, Y; Chen, TP; Liu, Z; Yu, YF; Fung, S | 2011 | 103 |
| 20917 | | Comprehensive study of the p-type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film | Fan, J; Zhu, C; Yang, B; Fung, S; Beling, CD; Brauer, G; Anwand, W; Grambole, D; Skorupa, W; Wong, KS; Zhong, YC; Xie, Z; Ling, CC | 2011 | 194 |
| 20918 | | Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering | Fan, JC; W Ding, G; Fung, S; Xie, Z; Zhong, YC; Wong, KS; Brauer, G; Anwand, W; Grambole, D; Ling, CC | 2010 | 686 |
| 20919 | | A two-terminal write-once-read-many-times-memory device based on an aluminum nitride thin film containing al nanocrystals | Liu, Y; Chen, TP; Ding, L; Li, YB; Zhang, S; Fung, S | 2010 | 190 |
| 20920 | | Modulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopy | Wang, M; Cheng, CC; Beling, CD; Fung, S; Chen, KJ | 2010 | 58 |
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