Grant: High-k Gate Dielectrics for High-Performance Germanium MISFET's

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Project Title
High-k Gate Dielectrics for High-Performance Germanium MISFET's
 
Principal Investigator Lai, Pui To (Principal investigator)
Project Code
HKU 713308E
 
Funding Year
2008/2009
 
Amount
367255
 
Panel Engineering (E)
Start Date
01-09-2008
 
Expected Completion
30-11-2010
 
Status
Completed
 
Keywords High-k Gate, Dielectrics, Germanium MISFET's
Sponsor RGC General Research Fund (GRF)
Grant Type/Funding Scheme General Research Fund (GRF)
Duration
27
 
Publication Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayer
Publication Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric
Publication Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness
Publication Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high- k HfO 2 gate dielectric by using La 2 O 3 interlayer sputtered with/without N 2 ambient
Publication Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric
Publication A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode
Publication Electrical properties of Ge metal-oxide-semiconductor capacitors with La 2O 3 gate dielectric annealed in different ambient
Publication Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer
Publication Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer
Publication Improved performance of yttrium-doped Al 2O 3 as inter-poly dielectric for flash-memory applications
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